Gate-controlled heat generation in ZnO nanowire FETs

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Pescaglini, Andrea
Biswas, Subhajit
Cammi, Davide
Ronning, Carsten
Holmes, Justin D.
Iacopino, Daniela
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Royal Society of Chemistry
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Nanoscale heating production using nanowires has been shown to be particularly attractive for a number of applications including nanostructure growth, localized doping, transparent heating and sensing. However, all proof-of-concept devices proposed so far relied on the use of highly conductive nanomaterials, typically metals or highly doped semiconductors. In this article, we demonstrate a novel nanoheater architecture based on a single semiconductor nanowire field-effect transistor (NW-FET). Nominally undoped ZnO nanowires were incorporated into three-terminal devices whereby control of the nanowire temperature at a given source-drain bias was achieved by additional charge carriers capacitatively induced via the third gate electrode. Joule-heating selective ablation of poly(methyl methacrylate) deposited on ZnO nanowires was shown, demonstrating the ability of the proposed NW-FET configuration to enhance by more than one order of magnitude the temperature of a ZnO nanowire, compared to traditional two-terminal configurations. These findings demonstrate the potential of field-effect architectures to improve Joule heating power in nanowires, thus vastly expanding the range of suitable materials and applications for nanowire-based nanoheaters.
Nanoscale , Nanowires , Nanomaterials , Semiconductors , Nanowire-based nanoheaters
Pescaglini, A., Biswas, S., Cammi, D., Ronning, C., Holmes, J. D. and Iacopino, D. (2017) 'Gate-controlled heat generation in ZnO nanowire FETs', Physical Chemistry Chemical Physics, 19(21), pp. 14042-14047. doi: 10.1039/C7CP01356F
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© Royal Society of Chemistry 2017. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Physical Chemistry Chemical Physics. To access the final edited and published work see