Gate-controlled heat generation in ZnO nanowire FETs

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dc.contributor.authorPescaglini, Andrea
dc.contributor.authorBiswas, Subhajit
dc.contributor.authorCammi, Davide
dc.contributor.authorRonning, Carsten
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorIacopino, Daniela
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderEuropean Commissionen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2017-07-14T14:43:10Z
dc.date.available2017-07-14T14:43:10Z
dc.date.issued2017-05-02
dc.date.updated2017-07-13T13:44:59Z
dc.description.abstractNanoscale heating production using nanowires has been shown to be particularly attractive for a number of applications including nanostructure growth, localized doping, transparent heating and sensing. However, all proof-of-concept devices proposed so far relied on the use of highly conductive nanomaterials, typically metals or highly doped semiconductors. In this article, we demonstrate a novel nanoheater architecture based on a single semiconductor nanowire field-effect transistor (NW-FET). Nominally undoped ZnO nanowires were incorporated into three-terminal devices whereby control of the nanowire temperature at a given source-drain bias was achieved by additional charge carriers capacitatively induced via the third gate electrode. Joule-heating selective ablation of poly(methyl methacrylate) deposited on ZnO nanowires was shown, demonstrating the ability of the proposed NW-FET configuration to enhance by more than one order of magnitude the temperature of a ZnO nanowire, compared to traditional two-terminal configurations. These findings demonstrate the potential of field-effect architectures to improve Joule heating power in nanowires, thus vastly expanding the range of suitable materials and applications for nanowire-based nanoheaters.en
dc.description.sponsorshipScience Foundation Ireland (Grant: 14/IA/2513)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationPescaglini, A., Biswas, S., Cammi, D., Ronning, C., Holmes, J. D. and Iacopino, D. (2017) 'Gate-controlled heat generation in ZnO nanowire FETs', Physical Chemistry Chemical Physics, 19(21), pp. 14042-14047. doi: 10.1039/C7CP01356Fen
dc.identifier.doi10.1039/C7CP01356F
dc.identifier.endpage14047en
dc.identifier.issn1463-9076
dc.identifier.issn1463-9084
dc.identifier.issued21en
dc.identifier.journaltitlePhysical Chemistry Chemical Physicsen
dc.identifier.startpage14042en
dc.identifier.urihttps://hdl.handle.net/10468/4242
dc.identifier.volume19en
dc.language.isoenen
dc.publisherRoyal Society of Chemistry
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP3::PEOPLE/265073/EU/Semiconductor nanowires: from fundamental physics to device applications/NANOWIRINGen
dc.rights© Royal Society of Chemistry 2017. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Physical Chemistry Chemical Physics. To access the final edited and published work see http://dx.doi.org/10.1039/C7CP01356Fen
dc.subjectNanoscaleen
dc.subjectNanowiresen
dc.subjectNanomaterialsen
dc.subjectSemiconductorsen
dc.subjectNanowire-based nanoheatersen
dc.titleGate-controlled heat generation in ZnO nanowire FETsen
dc.typeArticle (peer-reviewed)en
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