Indium segregation during III-V quantum wire and quantum dot formation on patterned substrates

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Date
2015
Authors
Moroni, Stefano T.
Dimastrodonato, Valeria
Chung, Tung-Hsun
Juska, Gediminas
Gocalińska, Agnieszka M.
Vvedensky, Dimitri D.
Pelucchi, Emanuele
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AIP Publishing
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Abstract
We report a model for metalorganic vapor-phase epitaxy on non-planar substrates, specifically V-grooves and pyramidal recesses, which we apply to the growth of InGaAs nanostructures. This model-based on a set of coupled reaction-diffusion equations, one for each facet in the system-accounts for the facet-dependence of all kinetic processes (e.g., precursor decomposition, adatom diffusion, and adatom lifetimes) and has been previously applied to account for the temperature-, concentration-, and temporal-dependence of AlGaAs nanostructures on GaAs(111)B surfaces with V-grooves and pyramidal recesses. In the present study, the growth of In(0.1)2Ga(0.88)As quantum wires at the bottom of V-grooves is used to determine a set of optimized kinetic parameters. Based on these parameters, we have modeled the growth of In0.25Ga0.75As nanostructures formed in pyramidal site-controlled quantum-dot systems, successfully producing a qualitative explanation for the temperature-dependence of their optical properties, which have been reported in previous studies. Finally, we present scanning electron and cross-sectional atomic force microscopy images which show previously unreported facetting at the bottom of the pyramidal recesses that allow quantum dot formation. (C) 2015 AIP Publishing LLC.
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Quantum dots , Diffusion , Quantum wires , Metalorganic vapor phase epitaxy , III-V semiconductors , Optical-properties , Growth , Heterostructures , Pyramids
Citation
Moroni, S. T., Dimastrodonato, V., Chung, T.-H., Juska, G., Gocalinska, A., Vvedensky, D. D. and Pelucchi, E. (2015) 'Indium segregation during III–V quantum wire and quantum dot formation on patterned substrates', Journal of Applied Physics, 117(16), 164313 (7pp). doi: 10.1063/1.4919362
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© 2015 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Moroni, S. T., Dimastrodonato, V., Chung, T.-H., Juska, G., Gocalinska, A., Vvedensky, D. D. and Pelucchi, E. (2015) 'Indium segregation during III–V quantum wire and quantum dot formation on patterned substrates', Journal of Applied Physics, 117(16), 164313 (7pp). doi: 10.1063/1.4919362 and may be found at http://aip.scitation.org/doi/10.1063/1.4919362