Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures

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dc.contributor.authorMarquardt, Oliver
dc.contributor.authorHickel, Tilmann
dc.contributor.authorNeugebauer, Joerg
dc.contributor.authorGambaryan, Karen M.
dc.contributor.authorAroutiounian, Vladimir M.
dc.contributor.funderNational Association for Armenian Studies and Research
dc.contributor.funderInternational Science and Technology Center
dc.date.accessioned2017-09-20T10:06:34Z
dc.date.available2017-09-20T10:06:34Z
dc.date.issued2011
dc.description.abstractQuaternary III-V InAsSbP quantum dots (QDs) have been grown in the form of cooperative InAsSb/InAsP structures using a modified version of the liquid phase epitaxy. High resolution scanning electron microscopy, atomic force microscopy, and Fourier-transform infrared spectrometry were used to investigate these so-called nano-camomiles, mainly consisting of a central InAsSb QD surrounded by six InAsP-QDs, that shall be referred to as leaves in the following. The observed QDs average density ranges from 0.8 to 2 x 10(9) cm(-2), with heights and widths dimensions from 2 to 20 nm and 5 to 45 nm, respectively. The average density of the leaves is equal to (6-10) x 10(9) cm(-2) with dimensions of approx. 5 to 40 nm in width and depth. To achieve a first basic understanding of the electronic properties, we have modeled these novel nanostructures using second-order continuum elasticity theory and an eight-band k . p model to calculate the electronic structure. Our calculations found a clear localization of hole states in the central InAsSb dot. The localization of electron states, however, was found to be weak and might thus be easily influenced by external electric fields or strain. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3624621]en
dc.description.sponsorshipInternational Science and Technology Center [A-1232]en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid43708
dc.identifier.citationMarquardt, O., Hickel, T., Neugebauer, J., Gambaryan, K. M. and Aroutiounian, V. M. (2011) 'Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures', Journal of Applied Physics, 110(4), 043708 (6pp). doi: 10.1063/1.3624621en
dc.identifier.doi10.1063/1.3624621
dc.identifier.endpage6
dc.identifier.issn0021-8979
dc.identifier.issued4
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4734
dc.identifier.volume110
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/10.1063/1.3624621
dc.rights© 2011, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Marquardt, O., Hickel, T., Neugebauer, J., Gambaryan, K. M. and Aroutiounian, V. M. (2011) 'Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures', Journal of Applied Physics, 110(4), 043708 (6pp). doi: 10.1063/1.3624621 and may be found at http://aip.scitation.org/doi/10.1063/1.3624621en
dc.subjectIII-V semiconductorsen
dc.subjectQuantum dotsen
dc.subjectNanostructuresen
dc.subjectElasticityen
dc.subjectBand gapen
dc.titleGrowth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructuresen
dc.typeArticle (peer-reviewed)en
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