Low threshold lasing in InP/GaInP quantum dot microdisks

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dc.contributor.authorLebedev, D. V.
dc.contributor.authorVlasov, A. S.
dc.contributor.authorKulagina, M. M.
dc.contributor.authorTroshkov, S. I.
dc.contributor.authorGuseva, Y. A.
dc.contributor.authorPelucchi, Emanuele
dc.contributor.authorGocalińska, Agnieszka M.
dc.contributor.authorJuska, Gediminas
dc.contributor.authorRomanova, A. Y.
dc.contributor.authorBuriak, P. A.
dc.contributor.authorSmirnov, V. I.
dc.contributor.authorShelaev, A. V.
dc.contributor.authorBykov, V. A.
dc.contributor.authorMintairov, A. M.
dc.contributor.funderRussian Foundation for Basic Researchen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderMinistry of Education and Science of the Russian Federationen
dc.date.accessioned2019-02-05T11:21:41Z
dc.date.available2019-02-05T11:21:41Z
dc.date.issued2018-12-27
dc.date.updated2019-02-05T11:03:00Z
dc.description.abstractWe report a realization of room temperature lasing threshold of 1 μW in GaInP microdisk containing a few self-aggregated InP/GaInP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. InP/GaInP QD microdisk cavities emitting in the spectral range of 700–800 nm and having the size of ~2 μm, free spectral range of ~35 nm and quality factors Q ~ 4000 were formed by wet chemical etching. Low dot density (~2 μm–2) and large dot size (~150 nm), suggesting a single dot lasing and maximum overlap of QD and cavity mode, were achieved using deposition of 3 ML of InP layer at 700°C.en
dc.description.sponsorshipRussian Foundation for Basic Research (Project Number 18-32-00321); Science Foundation Ireland (Grant Number 15/IA/2864); Ministry of the Education and Science of the Russian Federation (Contract Number 14.Z50.31.0021)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLebedev, D. V., Vlasov, A. S., Kulagina, M. M., Troshkov, S. I., Guseva, Y. A., Pelucchi, E., Gocalinska, A., Juska, G., Romanova, A. Y., Buriak, P. A., Smirnov, V. I., Shelaev, A. V., Bykov, V. A. and Mintairov, A. M. (2018) 'Low threshold lasing in InP/GaInP quantum dot microdisks', Semiconductors, 52(14), pp. 1894-1897. doi:10.1134/S1063782618140166en
dc.identifier.doi10.1134/S1063782618140166
dc.identifier.endpage1897en
dc.identifier.issn1063-7826
dc.identifier.issn1090-6479
dc.identifier.issued14en
dc.identifier.journaltitleSemiconductorsen
dc.identifier.startpage1894en
dc.identifier.urihttps://hdl.handle.net/10468/7435
dc.identifier.volume52en
dc.language.isoenen
dc.publisherPleiades Publishing, Ltd.en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/en
dc.rights© 2018, Pleiades Publishing, Ltd. This a preprint of the Work accepted for publication in Semiconductors, available at: https://doi.org/10.1134/S1063782618140166en
dc.subjectWhispering gallery modesen
dc.subjectLaseren
dc.titleLow threshold lasing in InP/GaInP quantum dot microdisksen
dc.typeArticle (peer-reviewed)en
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