Comparative study of polar and semipolar (1122) InGaN layers grown by metalorganic vapour phase epitaxy

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dc.contributor.authorDinh, Duc V.
dc.contributor.authorOehler, F.
dc.contributor.authorZubialevich, Vitaly Z.
dc.contributor.authorKappers, M. J.
dc.contributor.authorAlam, Shaif-ul
dc.contributor.authorCaliebe, Marian
dc.contributor.authorScholtz, F.
dc.contributor.authorHumphreys, C. J.
dc.contributor.authorParbrook, Peter J.
dc.date.accessioned2017-09-20T10:06:32Z
dc.date.available2017-09-20T10:06:32Z
dc.date.issued2014
dc.description.abstractInGaN layers were grown simultaneously on (11 (2) over bar2) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature (>= 750 degrees C), the indium content (<15%) of the (11<(2)over bar>2) and (0001) InGaN layers was similar. However, for temperatures less than 750 degrees C, the indium content of the (11 (2) over bar2) InGaN layers (15%-26%) were generally lower than those with (0001) orientation (15%-32%). The compositional deviation was attributed to the different strain relaxations between the (11 (2) over bar2) and (0001) InGaN layers. Room temperature photoluminescence measurements of the (11 (2) over bar2) InGaN layers showed an emission wavelength that shifts gradually from 380 nm to 580 nm with decreasing growth temperature (or increasing indium composition). The peak emission wavelength of the (11 (2) over bar2) InGaN layers with an indium content of more than 10% blue-shifted a constant value of approximate to(50-60) nm when using higher excitation power densities. This blue-shift was attributed to band filling effects in the layers. (C) 2014 AIP Publishing LLC.en
dc.description.sponsorshipEU-FP7 ALIGHT project [FP7-280587]; Programme for Research in Third Level Institutions (PRTLI) fourth and fifth cycles; Iranian Ministry of Science, Research and Technology; Science Foundation Irelanden
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid153505
dc.identifier.citationDinh, D. V., Oehler, F., Zubialevich, V. Z., Kappers, M. J., Alam, S. N., Caliebe, M., Scholtz, F., Humphreys, C. J. and Parbrook, P. J. (2014) 'Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy', Journal of Applied Physics, 116(15), 153505 (7pp). doi: 10.1063/1.4898569en
dc.identifier.doi10.1063/1.4898569
dc.identifier.endpage7
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issued15
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4715
dc.identifier.volume116
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/10.1063/1.4898569
dc.rights© 2014 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Dinh, D. V., Oehler, F., Zubialevich, V. Z., Kappers, M. J., Alam, S. N., Caliebe, M., Scholtz, F., Humphreys, C. J. and Parbrook, P. J. (2014) 'Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy', Journal of Applied Physics, 116(15), 153505 (7pp). doi: 10.1063/1.4898569 and may be found at http://aip.scitation.org/doi/10.1063/1.4898569en
dc.subjectYellow luminescenceen
dc.subjectGanen
dc.subjectLocalizationen
dc.subjectSapphireen
dc.subjectPoweren
dc.subjectIII-V semiconductorsen
dc.subjectIndiumen
dc.subjectPhotoluminescenceen
dc.subjectSurface morphologyen
dc.subjectX-ray diffractionen
dc.titleComparative study of polar and semipolar (1122) InGaN layers grown by metalorganic vapour phase epitaxyen
dc.typeArticle (peer-reviewed)en
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