Polarization matching design of InGaN-based semi-polar quantum wells-A case study of (11(2)over-bar2) orientation
Corbett, Brian M.
We present a theoretical study of the polarization engineering in semi-polar III-nitrides heterostructures. As a case study, we investigate the influence of GaN, AlGaN, and AlInN barrier material on the performance of semi-polar (11 (2) over bar2) InGaN-based quantum wells (QWs) for blue (450 nm) and yellow (560 nm) emission. We show that the magnitude of the total built-in electric field across the QW can be controlled by the barrier material. Our results indicate that AlInN is a promising candidate to achieve (i) reduced wavelength shifts with increasing currents and (ii) strongly increased electron-hole wave function overlap, important for reduced optical recombination times. (C) 2014 AIP Publishing LLC.
Quantum wells , Light emitting diodes , Polarization , Wave functions , Piezoelectric fields
Kozlowski, G., Schulz, S. and Corbett, B. (2014) 'Polarization matching design of InGaN-based semi-polar quantum wells—A case study of (112¯2) orientation', Applied Physics Letters, 104(5), pp. 051128. doi: 10.1063/1.4864478
© 2014 AIP Publishing LLC.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Kozlowski, G., Schulz, S. and Corbett, B. (2014) 'Polarization matching design of InGaN-based semi-polar quantum wells—A case study of (112¯2) orientation', Applied Physics Letters, 104(5), pp. 051128 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4864478