Polarization matching design of InGaN-based semi-polar quantum wells-A case study of (11(2)over-bar2) orientation

dc.contributor.authorKozlowski, Grzegorz
dc.contributor.authorSchulz, Stefan
dc.contributor.authorCorbett, Brian M.
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderSeventh Framework Programme
dc.date.accessioned2017-07-25T14:16:23Z
dc.date.available2017-07-25T14:16:23Z
dc.date.issued2014
dc.description.abstractWe present a theoretical study of the polarization engineering in semi-polar III-nitrides heterostructures. As a case study, we investigate the influence of GaN, AlGaN, and AlInN barrier material on the performance of semi-polar (11 (2) over bar2) InGaN-based quantum wells (QWs) for blue (450 nm) and yellow (560 nm) emission. We show that the magnitude of the total built-in electric field across the QW can be controlled by the barrier material. Our results indicate that AlInN is a promising candidate to achieve (i) reduced wavelength shifts with increasing currents and (ii) strongly increased electron-hole wave function overlap, important for reduced optical recombination times. (C) 2014 AIP Publishing LLC.en
dc.description.sponsorshipScience Foundation Ireland (10/IN.1/I2994)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid51128
dc.identifier.citationKozlowski, G., Schulz, S. and Corbett, B. (2014) 'Polarization matching design of InGaN-based semi-polar quantum wells—A case study of (112¯2) orientation', Applied Physics Letters, 104(5), pp. 051128. doi: 10.1063/1.4864478en
dc.identifier.doi10.1063/1.4864478
dc.identifier.endpage4
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued5
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4261
dc.identifier.volume104
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::NMP/280587/EU/AlGaInN materials on semi-polar templates for yellow emission in solid state lighting applications/ALIGHT
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4864478
dc.rights© 2014 AIP Publishing LLC.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Kozlowski, G., Schulz, S. and Corbett, B. (2014) 'Polarization matching design of InGaN-based semi-polar quantum wells—A case study of (112¯2) orientation', Applied Physics Letters, 104(5), pp. 051128 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4864478en
dc.subjectQuantum wellsen
dc.subjectLight emitting diodesen
dc.subjectPolarizationen
dc.subjectWave functionsen
dc.subjectPiezoelectric fieldsen
dc.titlePolarization matching design of InGaN-based semi-polar quantum wells-A case study of (11(2)over-bar2) orientationen
dc.typeArticle (peer-reviewed)en
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