Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN
Edwards, Paul R.
Sadler, Thomas C.
Parbrook, Peter J.
Martin, Robert W.
The influence of substrate miscut on Al0.5Ga0.5N layers was investigated using cathodoluminescence (CL) hyperspectral imaging and secondary electron imaging in an environmental scanning electron microscope. The samples were also characterized using atomic force microscopy and high resolution X-ray diffraction. It was found that small changes in substrate miscut have a strong influence on the morphology and luminescence properties of the AlGaN layers. Two different types are resolved. For low miscut angle, a crack-free morphology consisting of randomly sized domains is observed, between which there are notable shifts in the AlGaN near band edge emission energy. For high miscut angle, a morphology with step bunches and compositional inhomogeneities along the step bunches, evidenced by an additional CL peak along the step bunches, are observed. (C) 2014 Author(s).
Chemical-vapor-deposition , Buffer layer , Cathodoluminescence , Microscopy , Epilayers , Films , Cathodoluminescence , III-V semiconductors , Surface morphology , Luminescence , Semiconductor growth
Kusch, G., Li, H., Edwards, P. R., Bruckbauer, J., Sadler, T. C., Parbrook, P. J. and Martin, R. W. (2014) 'Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN', Applied Physics Letters, 104(9), pp. 092114. doi: 10.1063/1.4867165
© 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Kusch, G., Li, H., Edwards, P. R., Bruckbauer, J., Sadler, T. C., Parbrook, P. J. and Martin, R. W. (2014) 'Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN', Applied Physics Letters, 104(9), pp. 092114 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4871086