Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN
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Published Version
Date
2014
Authors
Kusch, Gunnar
Li, Haoning
Edwards, Paul R.
Bruckbauer, Jochen
Sadler, Thomas C.
Parbrook, Peter J.
Martin, Robert W.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
The influence of substrate miscut on Al0.5Ga0.5N layers was investigated using cathodoluminescence (CL) hyperspectral imaging and secondary electron imaging in an environmental scanning electron microscope. The samples were also characterized using atomic force microscopy and high resolution X-ray diffraction. It was found that small changes in substrate miscut have a strong influence on the morphology and luminescence properties of the AlGaN layers. Two different types are resolved. For low miscut angle, a crack-free morphology consisting of randomly sized domains is observed, between which there are notable shifts in the AlGaN near band edge emission energy. For high miscut angle, a morphology with step bunches and compositional inhomogeneities along the step bunches, evidenced by an additional CL peak along the step bunches, are observed. (C) 2014 Author(s).
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Keywords
Chemical-vapor-deposition , Buffer layer , Cathodoluminescence , Microscopy , Epilayers , Films , Cathodoluminescence , III-V semiconductors , Surface morphology , Luminescence , Semiconductor growth
Citation
Kusch, G., Li, H., Edwards, P. R., Bruckbauer, J., Sadler, T. C., Parbrook, P. J. and Martin, R. W. (2014) 'Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN', Applied Physics Letters, 104(9), pp. 092114. doi: 10.1063/1.4867165