Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN

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dc.contributor.authorKusch, Gunnar
dc.contributor.authorLi, Haoning
dc.contributor.authorEdwards, Paul R.
dc.contributor.authorBruckbauer, Jochen
dc.contributor.authorSadler, Thomas C.
dc.contributor.authorParbrook, Peter J.
dc.contributor.authorMartin, Robert W.
dc.contributor.funderEngineering and Physical Sciences Research Council
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderIrish Research Council
dc.date.accessioned2017-07-25T14:16:23Z
dc.date.available2017-07-25T14:16:23Z
dc.date.issued2014
dc.description.abstractThe influence of substrate miscut on Al0.5Ga0.5N layers was investigated using cathodoluminescence (CL) hyperspectral imaging and secondary electron imaging in an environmental scanning electron microscope. The samples were also characterized using atomic force microscopy and high resolution X-ray diffraction. It was found that small changes in substrate miscut have a strong influence on the morphology and luminescence properties of the AlGaN layers. Two different types are resolved. For low miscut angle, a crack-free morphology consisting of randomly sized domains is observed, between which there are notable shifts in the AlGaN near band edge emission energy. For high miscut angle, a morphology with step bunches and compositional inhomogeneities along the step bunches, evidenced by an additional CL peak along the step bunches, are observed. (C) 2014 Author(s).en
dc.description.sponsorshipEngineering and Physical Sciences Research Council of the UK (EP/I029141/1); Science Foundation Ireland (10\IN.1\I2993, 07\EN\E001A); Irish Research Councilen
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid92114
dc.identifier.citationKusch, G., Li, H., Edwards, P. R., Bruckbauer, J., Sadler, T. C., Parbrook, P. J. and Martin, R. W. (2014) 'Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN', Applied Physics Letters, 104(9), pp. 092114. doi: 10.1063/1.4867165en
dc.identifier.doi10.1063/1.4867165
dc.identifier.endpage4
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued9
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4258
dc.identifier.volume104
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4867165
dc.rights© 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Kusch, G., Li, H., Edwards, P. R., Bruckbauer, J., Sadler, T. C., Parbrook, P. J. and Martin, R. W. (2014) 'Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN', Applied Physics Letters, 104(9), pp. 092114 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4871086en
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectChemical-vapor-depositionen
dc.subjectBuffer layeren
dc.subjectCathodoluminescenceen
dc.subjectMicroscopyen
dc.subjectEpilayersen
dc.subjectFilmsen
dc.subjectCathodoluminescenceen
dc.subjectIII-V semiconductorsen
dc.subjectSurface morphologyen
dc.subjectLuminescenceen
dc.subjectSemiconductor growthen
dc.titleInfluence of substrate miscut angle on surface morphology and luminescence properties of AlGaNen
dc.typeArticle (peer-reviewed)en
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