Lasing of InP/AlInAs quantum dots in AlInAs microdisk cavity

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dc.contributor.authorLebedev, D. V.
dc.contributor.authorMintairov, A. M.
dc.contributor.authorKulagina, M.M
dc.contributor.authorTroshkov, S.I.
dc.contributor.authorKapaldo, J.
dc.contributor.authorMerz, J.L.
dc.contributor.authorRouvimov, S.
dc.contributor.authorJuska, Gediminas
dc.contributor.authorGocalińska, Agnieszka M.
dc.contributor.authorMoroni, Stefano T.
dc.contributor.authorPelucchi, Emanuele
dc.contributor.funderMinistry of Education and Science of the Russian Federationen
dc.contributor.funderHigher Education Authorityen
dc.date.accessioned2018-05-31T14:53:04Z
dc.date.available2018-05-31T14:53:04Z
dc.date.issued2016-02
dc.date.updated2018-05-31T14:39:50Z
dc.description.abstractAlInAs microdisk cavities having quality factor Q ~ 15 000 were fabricated from lattice-matched InP/AlInAs (interface/aggregation) quantum dot (QD) structures using wet chemical etching. The QD emission coupled to whispering gallery modes was observed at spectral range 920 - 1000 nm at temperatures of 10 - 160 K. The laser generation with threshold power density of 50 W/cm2 at T = 10 K was observed under optical pumping. It was found that the spontaneous emission coupling factor β equals 0.23 for these microdisks. The low temperature lasing operation and the small coupling factors observed suggest the existence of small QDs formed at the InP/InAlAs interface as the main active elements.en
dc.description.sponsorshipMinistry of the Education and Science of the Russian Federation (contract No.14.Z50.31.0021, 7th April 2014); Higher Education Authority (HEA Program for Research in Third Level Institutions via the INSPIRE programs)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLebedev, D. V., Mintairov, A. M., Kulagina, M. M., Troshkov, S. I., Kapaldo, J., Merz, J. L., Rouvimov, S., Juska, G., Gocalinska, A., Moroni, S. T. and Pelucchi, E. (2016) 'Lasing of InP/AlInAs quantum dots in AlInAs microdisk cavity', Journal of Physics: Conference Series, 690(1), 012023 (5 pp). doi: 10.1088/1742-6596/690/1/012023en
dc.identifier.doi10.1088/1742-6596/690/1/012023
dc.identifier.endpage012023-5en
dc.identifier.issn1742-6596
dc.identifier.issued1en
dc.identifier.journaltitleJournal of Physics: Conference Seriesen
dc.identifier.startpage012023-1en
dc.identifier.urihttps://hdl.handle.net/10468/6239
dc.identifier.volume690en
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/10/IN.1/I3000/IE/Controlling deterministically engineered III-V nanostructures: towards quantum information devices/en
dc.relation.urihttp://stacks.iop.org/1742-6596/690/i=1/a=012023
dc.rights© 2016, The Authors. Published under licence by IOP Publishing Ltd. Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.en
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.subjectSemiconductor quantum dotsen
dc.subjectActive elementsen
dc.subjectCoupling factoren
dc.subjectLaser generationen
dc.subjectLasing operationen
dc.subjectLow temperaturesen
dc.subjectMicrodisk cavitiesen
dc.subjectQuality factor Qen
dc.subjectThreshold power densityen
dc.subjectCouplingsen
dc.subjectNanocrystalsen
dc.subjectNanoelectronicsen
dc.subjectNanostructuresen
dc.subjectOptical pumpingen
dc.subjectPumping (laser)en
dc.subjectTemperatureen
dc.subjectWet etchingen
dc.subjectWhispering gallery modesen
dc.titleLasing of InP/AlInAs quantum dots in AlInAs microdisk cavityen
dc.typeArticle (peer-reviewed)en
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