Relative humidity dependent resistance switching of Bi2S3 nanowires

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JNM_17-2017-6823601.pdf(2.56 MB)
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Date
2017-12-25
Authors
Meija, Raimonds
Kunakova, Gunta
Prikulis, Juris
Varghese, Justin M.
Holmes, Justin D.
Erts, Donats
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Volume Title
Publisher
Hindawi Publishing Corporation
Published Version
10.1155/2017/6823601
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Abstract
Electrical properties of Bi2S3 nanowires grown using a single source precursor in anodic aluminum oxide templates are sensitive to the relative humidity in an inert gas environment. Dynamic sensing dependency is obtained and shows presence of spontaneous resistance switching effect between low and high relative humidity states. Employing the thermionic field emission theory, heights of Schottky barriers are estimated from the current-voltage characteristics and in relation to the humidity response. The change of Schottky barrier height is explained by local changes in physically adsorbed water molecules on the surface of the nanowire.
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Keywords
Nanowires , Dynamic sensing dependency , Schottky barriers , Semiconductor nanowires , Bi2S3 nanowires , Functional devices
Citation
Meija, R., Kunakova, G., Prikulis, J., Varghese, J. M., Holmes, J. D. and Erts, D. (2017) 'Relative Humidity Dependent Resistance Switching of Bi2S3 Nanowires', Journal of Nanomaterials, 2017, 6823601 (6pp). doi: 10.1155/2017/6823601
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https://www.hindawi.com/journals/jnm/2017/6823601/cta/
URI
https://hdl.handle.net/10468/5232
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Chemistry - Journal Articles
Tyndall National Institute - Journal Articles
Copyright
© 2017 Raimonds Meija et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.