Relative humidity dependent resistance switching of Bi2S3 nanowires

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dc.contributor.authorMeija, Raimonds
dc.contributor.authorKunakova, Gunta
dc.contributor.authorPrikulis, Juris
dc.contributor.authorVarghese, Justin M.
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorErts, Donats
dc.contributor.funderLatvijas Universitateen
dc.date.accessioned2018-01-04T15:05:00Z
dc.date.available2018-01-04T15:05:00Z
dc.date.issued2017-12-25
dc.date.updated2018-01-04T12:41:31Z
dc.description.abstractElectrical properties of Bi2S3 nanowires grown using a single source precursor in anodic aluminum oxide templates are sensitive to the relative humidity in an inert gas environment. Dynamic sensing dependency is obtained and shows presence of spontaneous resistance switching effect between low and high relative humidity states. Employing the thermionic field emission theory, heights of Schottky barriers are estimated from the current-voltage characteristics and in relation to the humidity response. The change of Schottky barrier height is explained by local changes in physically adsorbed water molecules on the surface of the nanowire.en
dc.description.sponsorshipLatvijas Universitate (Latvian National Research Program IMIS 2 and University of Latvia Base/Performance Funding Projects nos. AAP2016/B043 and ZD2010/AZ19)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMeija, R., Kunakova, G., Prikulis, J., Varghese, J. M., Holmes, J. D. and Erts, D. (2017) 'Relative Humidity Dependent Resistance Switching of Bi2S3 Nanowires', Journal of Nanomaterials, 2017, 6823601 (6pp). doi: 10.1155/2017/6823601en
dc.identifier.doi10.1155/2017/6823601
dc.identifier.endpage6823601-6en
dc.identifier.issn1687-4110
dc.identifier.journaltitleJournal of Nanomaterialsen
dc.identifier.startpage6823601-1en
dc.identifier.urihttps://hdl.handle.net/10468/5232
dc.identifier.volume2017en
dc.language.isoenen
dc.publisherHindawi Publishing Corporationen
dc.relation.urihttps://www.hindawi.com/journals/jnm/2017/6823601/cta/
dc.rights© 2017 Raimonds Meija et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.en
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subjectNanowiresen
dc.subjectDynamic sensing dependencyen
dc.subjectSchottky barriersen
dc.subjectSemiconductor nanowiresen
dc.subjectBi2S3 nanowiresen
dc.subjectFunctional devicesen
dc.titleRelative humidity dependent resistance switching of Bi2S3 nanowiresen
dc.typeArticle (peer-reviewed)en
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