Chemical approaches for doping nanodevice architectures
| dc.contributor.author | O'Connell, John | |
| dc.contributor.author | Biswas, Subhajit | |
| dc.contributor.author | Duffy, Ray | |
| dc.contributor.author | Holmes, Justin D. | |
| dc.contributor.funder | Science Foundation Ireland | en |
| dc.date.accessioned | 2016-08-03T11:54:32Z | |
| dc.date.available | 2016-08-03T11:54:32Z | |
| dc.date.issued | 2016-07-15 | |
| dc.date.updated | 2016-08-02T09:49:44Z | |
| dc.description.abstract | Advanced doping technologies are key for the continued scaling of semiconductor devices and the maintenance of device performance beyond the 14 nm technology node. Due to limitations of conventional ion-beam implantation with thin body and 3D device geometries, techniques which allow precise control over dopant diffusion and concentration, in addition to excellent conformality on 3D device surfaces, are required. Spin-on doping has shown promise as a conventional technique for doping new materials, particularly through application with other dopant methods, but may not be suitable for conformal doping of nanostructures. Additionally, residues remain after most spin-on-doping processes which are often difficult to remove. In-situ doping of nanostructures is especially common for bottom-up grown nanostructures but problems associated with concentration gradients and morphology changes are commonly experienced. Monolayer doping (MLD) has been shown to satisfy the requirements for extended defect-free, conformal and controllable doping on many materials ranging from traditional silicon and germanium devices to emerging replacement materials such as III-V compounds but challenges still remain, especially with regard to metrology and surface chemistry at such small feature sizes. This article summarises and critically assesses developments over the last number of years regarding the application of gas and solution phase techniques to dope silicon-, germanium- and III-V-based materials and nanostructures to obtain shallow diffusion depths coupled with high carrier concentrations and abrupt junctions. | en |
| dc.description.sponsorship | Science Foundation Ireland (SFI Grant: 09/IN.1/I2602) | en |
| dc.description.status | Peer reviewed | en |
| dc.description.version | Accepted Version | en |
| dc.format.mimetype | application/pdf | en |
| dc.identifier.citation | O'Connell, J., Biswas, S., Duffy, R. and Holmes, J.D. (2016) 'Chemical approaches for doping nanodevice architectures', Nanotechnology, 27(34), pp. 342002(1)-342002(19). doi:10.1088/0957-4484/27/34/342002 | en |
| dc.identifier.doi | 10.1088/0957-4484/27/34/342002 | |
| dc.identifier.endpage | 342002(19) | en |
| dc.identifier.issn | 0957-4484 | |
| dc.identifier.issued | 34 | en |
| dc.identifier.journaltitle | Nanotechnology | en |
| dc.identifier.startpage | 342002(1) | en |
| dc.identifier.uri | https://hdl.handle.net/10468/2959 | |
| dc.identifier.volume | 27 | en |
| dc.language.iso | en | en |
| dc.publisher | IOP Publishing Ltd. | en |
| dc.rights | © 2016 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://stacks.iop.org/0957-4484/27/i=34/a=342002 | en |
| dc.subject | Monolayer | en |
| dc.subject | Doping | en |
| dc.subject | Ultra-shallow junction | en |
| dc.subject | Abrupt | en |
| dc.subject | MLD | en |
| dc.subject | Chemical doping | en |
| dc.subject | Silicon | en |
| dc.subject | Germanium | en |
| dc.subject | InGaAs | en |
| dc.title | Chemical approaches for doping nanodevice architectures | en |
| dc.type | Article (peer-reviewed) | en |
