A carbene stabilized precursor for the spatial atomic layer deposition of copper thin films

dc.check.date2021-10-07
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorBoysen, Nils
dc.contributor.authorMisimi, Bujamin
dc.contributor.authorMuriqi, Arbresha
dc.contributor.authorWree, Jan-Lucas
dc.contributor.authorHasselmann, Tim
dc.contributor.authorRogalla, Detlef
dc.contributor.authorHaeger, Tobias
dc.contributor.authorTheirich, Detlef
dc.contributor.authorNolan, Michael
dc.contributor.authorRiedl, Thomas
dc.contributor.authorDevi, Anjana
dc.contributor.funderDeutsche Forschungsgemeinschaften
dc.contributor.funderHorizon 2020en
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2020-11-16T11:59:42Z
dc.date.available2020-11-16T11:59:42Z
dc.date.issued2020-10-07
dc.date.updated2020-11-16T11:38:45Z
dc.description.abstractThis paper demonstrates a carbene stabilized precursor [Cu(tBuNHC)(hmds)] with suitable volatility, reactivity and thermal stability, that enables the spatial plasma-enhanced atomic layer deposition (APP-ALD) of copper thin films at atmospheric pressure. The resulting conductive and pure copper layers were thoroughly analysed and a comparison of precursor and process with the previously reported silver analogue [Ag(tBuNHC)(hmds)] revealed interesting similarities and notable differences in precursor chemistry and growth characteristics. This first report of APP-ALD grown copper layers is an important starting point for high throughput, low-cost manufacturing of copper films for nano- and optoelectronic devices.en
dc.description.sponsorshipDeutsche Forschungsgemeinschaft (DFG-DE 790-18-1; RI1551/13-1)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBoysen, N., Misimi, B., Muriqi, A., Wree, J.-L., Hasselmann, T., Rogalla, D., Haeger, T., Theirich, D., Nolan, M., Riedl, T. and Devi, A. (2020) 'A carbene stabilized precursor for the spatial atomic layer deposition of copper thin films', Chemical Communications, 56(89), pp. 13752-13755. doi: 10.1039/d0cc05781aen
dc.identifier.doi10.1039/d0cc05781aen
dc.identifier.eissn1364-548X
dc.identifier.endpage13755en
dc.identifier.issn1359-7345
dc.identifier.issued89en
dc.identifier.journaltitleChemical Communicationsen
dc.identifier.startpage13752en
dc.identifier.urihttps://hdl.handle.net/10468/10759
dc.identifier.volume56en
dc.language.isoenen
dc.publisherRoyal Society of Chemistryen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::MSCA-ITN-ETN/765378/EU/A European Training Network for Functional Hybrid Coatings by Molecular Layer Deposition/HYCOATen
dc.rights© 2020, the Authors. Publication rights licensed to the Royal Society of Chemistry. All rights reserved.en
dc.subjectCarbene stabilized precursor [Cu(tBuNHC)-(hmds)]en
dc.subjectSpatial plasma-enhanced atomic layer deposition (APP-ALD)en
dc.subjectCopper thin filmsen
dc.subjectAtmospheric pressureen
dc.subjectConductive and pure copper layersen
dc.subjectSilver analogue [Ag(tBuNHC)(hmds)]en
dc.subjectAPP-ALD grown copper layersen
dc.titleA carbene stabilized precursor for the spatial atomic layer deposition of copper thin filmsen
dc.typeArticle (peer-reviewed)en
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