Micro-transfer printed InGaAs photodetector on SOI platform

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Date
2023-06-07
Authors
Muthuganesan, Hemalatha
Mura, Enrica
Pelucchi, Emanuele
Littlejohns, Callum
Yan, Xingzhao
Banakar, Mehdi
Tran, Ying
Corbett, Brian
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Institute of Electrical and Electronics Engineers (IEEE)
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Abstract
Transfer-printed InGaAs photodetectors are integrated on SOI by evanescent, grating and edge coupling, exhibiting responsivities of 0.7, 0.38 and 0.15 A/W, with dark currents of 48,47 and 400 nA at 0.6 V reverse bias respectively
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Keywords
Photodetector , In GaAs , Transfer printing , Heterogeneous integration
Citation
Muthuganesan, H., Mura, E., Pelucchi, E., Littlejohns, C., Yan, X., Banakar, M., Tran, Y. and Corbett, B. (2023) 'Micro-transfer printed InGaAs photodetector on SOI platform', 2023 IEEE Silicon Photonics Conference (SiPhotonics), Washington, DC, USA, 4-7 April, pp. 1-2. https://doi.org/10.1109/SiPhotonics55903.2023.10141914
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