Germanium oxide removal by citric acid and thiol passivation from citric acid terminated Ge(100)

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Additional file 1: Supporting Information
Collins, Gillian
Aureau, Damien
Holmes, Justin D.
Etcheberry, Arnaud
O'Dwyer, Colm
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Many applications of germanium (Ge) are underpinned by effective oxide removal and surface passivation. This important surface treatment step often requires H–X (X = Cl, Br, I) or HF etchants. Here, we show that aqueous citric acid solutions are effective in the removal of GeOx. The stability of citric acid-treated Ge(100) is compared to HF and HCl treated surfaces and analyzed by X-ray photoelectron spectroscopy. Further Ge surface passivation was investigated by thiolation using alkane monothiols and dithiols. The organic passivation layers show good stability with no oxide regrowth observed after 3 days of ambient exposure.
Fourier transform infrared spectroscopy , FTIR , X-ray photoelectron spectroscopy , XPS , Ge(111) , Surface functionalization , Ge nanowires , Silicon , Nanoparticles , Germanium
Collins, G., Aureau, D., Holmes, J. D., Etcheberry, A. and O’Dwyer, C. (2014) 'Germanium Oxide Removal by Citric Acid and Thiol Passivation from Citric Acid-Terminated Ge(100)', Langmuir, 30(47), pp. 14123-14127. doi: 10.1021/la503819z
© 2014 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Langmuir, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see