Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation

Simple item page
dc.contributor.authorByun, Ki Yeol
dc.contributor.authorFleming, Peter G.
dc.contributor.authorBennett, Nick
dc.contributor.authorGity, Farzan
dc.contributor.authorMcNally, Patrick
dc.contributor.authorMorris, Michael A.
dc.contributor.authorFerain, Isabelle
dc.contributor.authorColinge, Cindy
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-09-20T10:06:34Z
dc.date.available2017-09-20T10:06:34Z
dc.date.issued2011
dc.description.abstractIn this work, we investigate the directly bonded germanium-silicon interfaces to facilitate the development of high quality germanium silicon hetero integration at the wafer scale. X-ray photoelectron spectroscopy data is presented which provides the chemical composition of the germanium surfaces as a function of the hydrophilic bonding reaction at the interface. The bonding process induced long range deformation is detected by synchrotron x-ray topography. The hetero-interface is characterized by measuring forward and reverse current, and by high resolution transmission electron microscopy. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3601355]en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid123529
dc.identifier.citationByun, K. Y., Fleming, P., Bennett, N., Gity, F., McNally, P., Morris, M., Ferain, I. and Colinge, C. (2011) 'Comprehensive investigation of Ge–Si bonded interfaces using oxygen radical activation', Journal of Applied Physics, 109(12), 123529 (5pp). doi: 10.1063/1.3601355en
dc.identifier.doi10.1063/1.3601355
dc.identifier.endpage5
dc.identifier.issn0021-8979
dc.identifier.issued12
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4737
dc.identifier.volume109
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/07/IN.1/I937/IE/Low Temperature Direct Bonding for Heterogeneous Integration/
dc.relation.urihttp://aip.scitation.org/doi/10.1063/1.3601355
dc.rights© 2011, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Byun, K. Y., Fleming, P., Bennett, N., Gity, F., McNally, P., Morris, M., Ferain, I. and Colinge, C. (2011) 'Comprehensive investigation of Ge–Si bonded interfaces using oxygen radical activation', Journal of Applied Physics, 109(12), 123529 (5pp). doi: 10.1063/1.3601355 and may be found at http://aip.scitation.org/doi/10.1063/1.3601355en
dc.subjectGermaniumen
dc.subjectElemental semiconductorsen
dc.subjectInterface structureen
dc.subjectSurface oxidationen
dc.subjectAnnealingen
dc.titleComprehensive investigation of Ge-Si bonded interfaces using oxygen radical activationen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
3087.pdf
Size:
719.12 KB
Format:
Adobe Portable Document Format
Description:
Published Version
Download
Collections
Tyndall National Institute - Journal Articles
Chemistry - Journal Articles
Environmental Research Institute - Journal Articles