Stress in silicon interlayers at the SiO(x)/Ge interface

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dc.contributor.authorO'Callaghan, Sean
dc.contributor.authorMonaghan, Scott
dc.contributor.authorElliott, Simon D.
dc.contributor.authorGreer, James C.
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T13:20:06Z
dc.date.available2017-07-28T13:20:06Z
dc.date.issued2007
dc.description.abstractMaterials such as germanium display an advantage relative to silicon in terms of carrier mobilities but form poor quality interfaces to oxides. By sandwiching silicon layers between a germanium substrate and the oxide, advantages of the silicon oxide/silicon (SiO(x)/Si) interface can be retained combined with the advantage of a high mobility germanium substrate. Using density functional theory calculations, stress within the silicon interlayer is quantified for different interlayer thicknesses revealing that for up to three silicon layers, the stress in the interlayer is compensated for by the energy gained by forming silicon-oxygen bonds at the interface. (c) 2007 American Institute of Physics. (DOI:10.1063/1.2713122)en
dc.description.sponsorshipScience Foundation Irelanden
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid143511
dc.identifier.citationO’Callaghan, S., Monaghan, S., Elliott, S. D. and Greer, J. C. (2007) 'Stress in silicon interlayers at the SiOx∕Ge interface', Applied Physics Letters, 90(14), pp. 143511. doi: 10.1063/1.2713122en
dc.identifier.doi10.1063/1.2713122
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued14
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4379
dc.identifier.volume90
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.2713122
dc.rights© 2007 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Callaghan, S., Monaghan, S., Elliott, S. D. and Greer, J. C. (2007) 'Stress in silicon interlayers at the SiOx∕Ge interface', Applied Physics Letters, 90(14), pp. 143511 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2713122en
dc.subjectGermanium mos capacitorsen
dc.subjectGateen
dc.subjectPassivationen
dc.subjectSien
dc.subjectSiliconen
dc.subjectGermaniumen
dc.subjectElemental semiconductorsen
dc.subjectChemical bondsen
dc.subjectInterface structureen
dc.titleStress in silicon interlayers at the SiO(x)/Ge interfaceen
dc.typeArticle (peer-reviewed)en
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