Tuning InP self-assembled quantum structures to telecom wavelength: A versatile original InP(As) nanostructure "workshop"

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Date
2017-03-13
Authors
Mura, Enrica E.
Gocalińska, Agnieszka M.
Juska, Gediminas
Moroni, Stefano T.
Pescaglini, Andrea
Pelucchi, Emanuele
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AIP Publishing
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Abstract
The influence of hydride exposure on previously unreported self-assembled InP(As) nanostructures is investigated, showing an unexpected morphological variability with growth parameters, and producing a large family of InP(As) nanostructures by metalorganic vapour phase epitaxy, from dome and ring-like structures to double dot in a ring ensembles. Moreover, preliminary microphotoluminescence data are indicating the capped rings system as an interesting candidate for single quantum emitters at telecom wavelengths, potentially becoming a possible alternative to InAs QDs for quantum technology and telecom applications.
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Keywords
III-V semiconductors , Indium compounds , MOCVD , Nanofabrication , Nanostructured materials , Photoluminescence , Self-assembly , Semiconductor growth , Semiconductor quantum dots , Vapour phase epitaxial growth
Citation
Mura, E. E., Gocalinska, A., Juska, G., Moroni, S. T., Pescaglini, A. and Pelucchi, E. (2017) ‘Tuning InP self-assembled quantum structures to telecom wavelength: A versatile original InP(As) nanostructure “workshop”’, Applied Physics Letters, 110, 113101 (5pp). doi:10.1063/1.4978528
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© 2017, the Authors. Reproduced with the permission of AIP Publishing from Applied Physics Letters, 110, 113101 (5pp). doi:10.1063/1.4978528