Tuning InP self-assembled quantum structures to telecom wavelength: A versatile original InP(As) nanostructure "workshop"

dc.check.date2018-03-13
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorMura, Enrica E.
dc.contributor.authorGocalińska, Agnieszka M.
dc.contributor.authorJuska, Gediminas
dc.contributor.authorMoroni, Stefano T.
dc.contributor.authorPescaglini, Andrea
dc.contributor.authorPelucchi, Emanuele
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderIrish Research Councilen
dc.date.accessioned2017-05-16T08:50:49Z
dc.date.available2017-05-16T08:50:49Z
dc.date.issued2017-03-13
dc.date.updated2017-05-16T08:34:06Z
dc.description.abstractThe influence of hydride exposure on previously unreported self-assembled InP(As) nanostructures is investigated, showing an unexpected morphological variability with growth parameters, and producing a large family of InP(As) nanostructures by metalorganic vapour phase epitaxy, from dome and ring-like structures to double dot in a ring ensembles. Moreover, preliminary microphotoluminescence data are indicating the capped rings system as an interesting candidate for single quantum emitters at telecom wavelengths, potentially becoming a possible alternative to InAs QDs for quantum technology and telecom applications.en
dc.description.sponsorshipHigher Education Authority (INSPIRE Programme); Science Foundation Ireland (IPIC Award 12/RC/2276 and Grant 10/IN.1/I3000); Irish Research Council (Grant EPSPG/2014/35)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid113101
dc.identifier.citationMura, E. E., Gocalinska, A., Juska, G., Moroni, S. T., Pescaglini, A. and Pelucchi, E. (2017) ‘Tuning InP self-assembled quantum structures to telecom wavelength: A versatile original InP(As) nanostructure “workshop”’, Applied Physics Letters, 110, 113101 (5pp). doi:10.1063/1.4978528en
dc.identifier.doi10.1063/1.4978528
dc.identifier.endpage5en
dc.identifier.issn0003-6951
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/3971
dc.identifier.volume110en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.rights© 2017, the Authors. Reproduced with the permission of AIP Publishing from Applied Physics Letters, 110, 113101 (5pp). doi:10.1063/1.4978528en
dc.subjectIII-V semiconductorsen
dc.subjectIndium compoundsen
dc.subjectMOCVDen
dc.subjectNanofabricationen
dc.subjectNanostructured materialsen
dc.subjectPhotoluminescenceen
dc.subjectSelf-assemblyen
dc.subjectSemiconductor growthen
dc.subjectSemiconductor quantum dotsen
dc.subjectVapour phase epitaxial growthen
dc.titleTuning InP self-assembled quantum structures to telecom wavelength: A versatile original InP(As) nanostructure "workshop"en
dc.typeArticle (peer-reviewed)en
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