Investigating the transient response of Schottky barrier back-gated MoS2 transistors

Simple item page
dc.check.date2021-02-13
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorMarquez, Carlos
dc.contributor.authorSalazar, Norberto
dc.contributor.authorGity, Farzan
dc.contributor.authorNavarro, Carlos
dc.contributor.authorMirabelli, Gioele
dc.contributor.authorGaldon, Jose Carlos
dc.contributor.authorDuffy, Ray
dc.contributor.authorNavarro, Santiago
dc.contributor.authorHurley, Paul K.
dc.contributor.authorGamiz, Francisco
dc.contributor.funderHorizon 2020en
dc.contributor.funderSpanish National Programen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderUniversidad de Granadaen
dc.date.accessioned2020-02-28T12:24:25Z
dc.date.available2020-02-28T12:24:25Z
dc.date.issued2020-02-13
dc.date.updated2020-02-19T12:18:53Z
dc.description.abstractMolybdenum disulfide (MoS2) MOSFETs have been widely reported to exhibit hysteresis behavior, which is usually attributed to charge trapping effects due to defective/sub-stoichiometric compositions in the material, or defects near, or at, the oxide/channel interfaces. It is also suggested that defective MoS2 transistors show current limitations caused by the Schottky barrier junctions formed at the contacts. Here, we report on the static and dynamic device response of back-gated MoS$_2$ transistors directly fabricated on a SiO2/Si substrate using chemical vapor deposition synthesis, without film transfer, and standard CMOS optical lithography. The devices exhibit an atypical hysteresis in the transfer characteristics, as well as a delayed response in the formation of the conducting channel in response to voltage pulses applied to the back gate. Analysis of the output characteristic is consistent with two back-to-back Schottky diodes, allowing the Fermi level pinning position at the Ni/MoS2 source and drain contacts and blocking the MoS2 hole channel. Capacitance-voltage characterization demonstrates that the grown MoS2 thin film is p-type, resulting in a nominally-off, inversion mode, n-channel device. Analysis of the transient response and hysteresis as a function of device temperature, illumination and ambient conditions indicates that the dynamic response of the device is determined by the net charge in the MoS2 film combined with the minority carrier generation lifetime in the underlying silicon substrate. The work demonstrates the strong dependence of the device response time on substrate, temperature, illumination, and net charge in the MoS2 layer opening the possibility of applications in photo-detectors and sensors.en
dc.description.sponsorshipSpanish National Program (Grant No. TEC2017-89800-R); Science Foundation Ireland (12/RC/2278-P2); Jose Castillejo Mobility Grant (No. CAS18/00460); Universidad de Granada (Plan Propio Programme 8)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMarquez, C., Salazar, N., Gity, F., Navarro, C., Mirabelli, G., Galdon, J. C., Duffy, R., Navarro, S., Hurley, P. K. and Gamiz, F. (2020) 'Investigating the transient response of Schottky barrier back-gated MoS2 transistors', 2D Materials. doi: 10.1088/2053-1583/ab7628en
dc.identifier.doi10.1088/2053-1583/ab7628en
dc.identifier.eissn2053-1583
dc.identifier.journaltitle2D Materialsen
dc.identifier.urihttps://hdl.handle.net/10468/9714
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/654384/EU/Access to European Nanoelectronics Network/ASCENTen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3131/IE/Investigating Emerging 2D Semiconductor Technology/en
dc.relation.urihttp://iopscience.iop.org/10.1088/2053-1583/ab7628
dc.rights© 2020, IOP Publishing. This Accepted Manuscript is available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/en
dc.subjectDefectsen
dc.subjectHysteresisen
dc.subjectMoS2en
dc.subjectSchottky barrier transistorsen
dc.subjectTwo-dimensional materialsen
dc.subjectReliabilityen
dc.titleInvestigating the transient response of Schottky barrier back-gated MoS2 transistorsen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 2 of 2
Thumbnail Image
Name:
Marquez+et+al_2020_2D_Mater._10.1088_2053-1583_ab7628_(1).pdf
Size:
6.64 MB
Format:
Adobe Portable Document Format
Description:
Accepted Version
Download
Thumbnail Image
Name:
MoS2_iop_clean_version.pdf
Size:
6.53 MB
Format:
Adobe Portable Document Format
Description:
Author's Accepted Version
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Tyndall National Institute - Journal Articles