Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium

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dc.contributor.authorBoninelli, Simona
dc.contributor.authorMilazzo, R
dc.contributor.authorCarles, Robert
dc.contributor.authorHoudellier, Florent
dc.contributor.authorDuffy, Ray
dc.contributor.authorHuet, Karim
dc.contributor.authorLa Magna, Antonio
dc.contributor.authorNapolitani, E
dc.contributor.authorCristiano, Fuccio
dc.date.accessioned2018-09-20T15:53:47Z
dc.date.available2018-09-20T15:53:47Z
dc.date.issued2018
dc.description.abstractLaser Thermal Annealing (LTA) at various energy densities was used to recrystallize and activate amorphized germanium doped with phosphorous by ion implantation. The structural modifications induced during the recrystallization and the related dopant diffusion were first investigated. After LTA at low energy densities, the P electrical activation was poor while the dopant distribution was mainly localized in the polycrystalline Ge resulting from the anneal. Conversely, full dopant activation (up to 1 x 10(20) cm(-3)) in a perfectly recrystallized material was observed after annealing at higher energy densities. Measurements of lattice parameters performed on the fully activated structures show that P doping results in a lattice expansion, with a perpendicular lattice strain per atom beta(Ps) = +0.7 +/- 0.1 angstrom(3). This clearly indicates that, despite the small atomic radius of P compared to Ge, the "electronic contribution" to the lattice parameter modification (due to the increased hydrostatic deformation potential in the conduction band of P doped Ge) is larger than the "size mismatch contribution" associated with the atomic radii. Such behavior, predicted by theory, is observed experimentally for the first time, thanks to the high sensitivity of the measurement techniques used in this work. (c) 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid58504
dc.identifier.citationBoninelli, S., Milazzo, R., Carles, R., Houdellier, F., Duffy, R., Huet, K., La Magna, A., Napolitani, E. and Cristiano, F. (2018) 'Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium', APL Materials, 6(5), 058504 (7pp). doi: 10.1063/1.5022876en
dc.identifier.doi10.1063/1.5022876
dc.identifier.endpage7
dc.identifier.issn2166-532X
dc.identifier.issued5
dc.identifier.journaltitleAPL Materialsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/6846
dc.identifier.volume6
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttps://aip.scitation.org/doi/10.1063/1.5022876
dc.rights© 2018, the Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.subjectBeam electron-diffractionen
dc.subjectSien
dc.subjectSemiconductorsen
dc.subjectActivationen
dc.subjectPhotonicsen
dc.subjectSiliconen
dc.subjectStrainen
dc.titleNanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germaniumen
dc.typeArticle (peer-reviewed)en
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