Fully porous GaN p-n junctions fabricated by chemical vapor deposition.
Bilousov, Oleksandr V.
Carvajal, Joan J.
Zubialevich, Vitaly Z.
Parbrook, Peter J.
American Chemical Society (ACS)
Porous GaN based LEDs produced by corrosion etching techniques demonstrated enhanced light extraction efficiency in the past. However, these fabrication techniques require further postgrown processing steps, which increases the price of the final system. Also, the penetration depth of these etching techniques is limited, and affects not only the semiconductor but also the other elements constituting the LED when applied to the final device. In this paper, we present the fabrication of fully porous GaN p–n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p–n junction. We characterized their diode behavior from room temperature to 673 K and demonstrated their ability as current rectifiers, thus proving the potential of these fully porous p–n junctions for diode and LEDs applications. The electrical and luminescence characterization confirm that high electronic quality porous structures can be obtained by this method, and we believe this investigation can be extended to other III–N materials for the development of white light LEDs, or to reduce reflection losses and narrowing the output light cone for improved LED external quantum efficiencies.
Porous GaN , Porous p−n junction diode , Light emitting diodes , Chemical vapor deposition , Epitaxial growth
Bilousov, O. V., Carvajal, J. J., Geaney, H., Zubialevich, V. Z., Parbrook, P. J., Martínez, O., Jiménez, J., Díaz, F., Aguiló, M. and O’Dwyer, C. (2014) 'Fully Porous GaN p–n Junction Diodes Fabricated by Chemical Vapor Deposition', ACS Applied Materials & Interfaces, 6(20), pp. 17954-17964.
© 2014 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/pdf/10.1021/am504786b