Fully porous GaN p-n junctions fabricated by chemical vapor deposition.

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dc.contributor.authorBilousov, Oleksandr V.
dc.contributor.authorCarvajal, Joan J.
dc.contributor.authorGeaney, Hugh
dc.contributor.authorZubialevich, Vitaly Z.
dc.contributor.authorParbrook, Peter J.
dc.contributor.authorMartínez, Oscar
dc.contributor.authorJiménez, Juan
dc.contributor.authorDiaz, Francesc
dc.contributor.authorAguilo, Magdalena
dc.contributor.authorO'Dwyer, Colm
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderMinisterio de Economía, Industria y Competitividad, Gobierno de Españaen
dc.contributor.funderGeneralitat de Catalunyaen
dc.contributor.funderConsejería de Educación, Junta de Castilla y Leónen
dc.contributor.funderIrish Research Councilen
dc.date.accessioned2018-05-11T15:50:03Z
dc.date.available2018-05-11T15:50:03Z
dc.date.issued2014-10-01
dc.date.updated2018-05-03T10:51:22Z
dc.description.abstractPorous GaN based LEDs produced by corrosion etching techniques demonstrated enhanced light extraction efficiency in the past. However, these fabrication techniques require further postgrown processing steps, which increases the price of the final system. Also, the penetration depth of these etching techniques is limited, and affects not only the semiconductor but also the other elements constituting the LED when applied to the final device. In this paper, we present the fabrication of fully porous GaN p–n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p–n junction. We characterized their diode behavior from room temperature to 673 K and demonstrated their ability as current rectifiers, thus proving the potential of these fully porous p–n junctions for diode and LEDs applications. The electrical and luminescence characterization confirm that high electronic quality porous structures can be obtained by this method, and we believe this investigation can be extended to other III–N materials for the development of white light LEDs, or to reduce reflection losses and narrowing the output light cone for improved LED external quantum efficiencies.en
dc.description.sponsorshipMinisterio de Economía, Industria y Competitividad, Gobierno de España (Spanish Government under Projects No. MAT2011-29255-C02-02, TEC2010-21574-C02-02, MAT2010-20441-C02-01-02, MAT-2010-16116); Generalitat de Catalunya (Project No. 2009SGR235; 2013FI_B200108); Consejería de Educación, Junta de Castilla y León (project no. VA166A11-2 and VA293U13); Irish Research Council (New Foundations Award)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBilousov, O. V., Carvajal, J. J., Geaney, H., Zubialevich, V. Z., Parbrook, P. J., Martínez, O., Jiménez, J., Díaz, F., Aguiló, M. and O’Dwyer, C. (2014) 'Fully Porous GaN p–n Junction Diodes Fabricated by Chemical Vapor Deposition', ACS Applied Materials & Interfaces, 6(20), pp. 17954-17964.en
dc.identifier.doi10.1021/am504786b
dc.identifier.endpage17964en
dc.identifier.issn1944-8244
dc.identifier.issued20en
dc.identifier.journaltitleACS Applied Materials & Interfacesen
dc.identifier.startpage17954en
dc.identifier.urihttps://hdl.handle.net/10468/6094
dc.identifier.volume6en
dc.language.isoenen
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::SPA/263044/EU/Small debris removal by laser illumination and complementary technologie/CLEANSPACEen
dc.relation.urihttp://pubs.acs.org/doi/pdf/10.1021/am504786b
dc.rights© 2014 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/pdf/10.1021/am504786ben
dc.subjectPorous GaNen
dc.subjectPorous p−n junction diodeen
dc.subjectLight emitting diodesen
dc.subjectChemical vapor depositionen
dc.subjectEpitaxial growthen
dc.titleFully porous GaN p-n junctions fabricated by chemical vapor deposition.en
dc.typeArticle (peer-reviewed)en
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