High-performance photodetectors based on the 2d sias/sns2 heterojunction

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dc.contributor.authorSun, Yinchang
dc.contributor.authorXie, Liming
dc.contributor.authorMa, Zhao
dc.contributor.authorQian, Ziyue
dc.contributor.authorLiao, Junyi
dc.contributor.authorHussain, Sabir
dc.contributor.authorLiu, Hongjun
dc.contributor.authorQiu, Hailong
dc.contributor.authorWu, Juanxia
dc.contributor.authorHu, Zhanggui
dc.contributor.funderNational Natural Science Foundation of China
dc.contributor.funderNatural Science Foundation of Tianjin Municipality
dc.contributor.funderState Administration for Science, Technology and Industry for National Defense
dc.contributor.funderKey Project of Frontier Science Research of Chinese Academy of Sciences
dc.contributor.funderUniversity of Chinese Academy of Sciences
dc.date.accessioned2024-01-15T09:48:44Z
dc.date.available2024-01-03T14:16:48Zen
dc.date.available2024-01-15T09:48:44Z
dc.date.issued2022-01-24
dc.date.updated2024-01-03T14:16:49Zen
dc.description.abstractConstructing 2D heterojunctions with high performance is the critical solution for the optoelectronic applications of 2D materials. This work reports on the studies on the preparation of high-quality van der Waals SiAs single crystals and high-performance photodetectors based on the 2D SiAs/SnS2 heterojunction. The crystals are grown using the chemical vapor transport (CVT) method and then the bulk crystals are exfoliated to a few layers. Raman spectroscopic characterization shows that the low wavenumber peaks from interlayer vibrations shift significantly along with SiAs' thickness. In addition, when van der Waals heterojunctions of p-type SiAs/n-type SnS2 are fabricated, under the source-drain voltage of -1 V-1 V, they exhibit prominent rectification characteristics, and the ratio of forwarding conduction current to reverse shutdown current is close to 102, showing a muted response of 1 A/W under excitation light of 550 nm. The light responsivity and external quantum efficiency are increased by 100 times those of SiAs photodetectors. Our experimental results enrich the research on the IVA-VA group p-type layered semiconductors.en
dc.description.sponsorshipNational Natural Science Foundation of China (Grant Nos. 51972229, 51802218, 51872198, 52172151, and 21822502); Natural Science Foundation of Tianjin (19JCYBJC17800, 18JCYBJC42500); National Defense Science and Technology 173 Program (2021-JCJQ-JJ-0639); Key Research Program of Frontier Sciences of CAS (QYZDB-SSW-SYS031); Strategic Priority Research Program of CAS (XDB30000000).
dc.description.statusPeer revieweden
dc.description.versionPublished Version
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid371
dc.identifier.citationSun, Y., Xie, L., Ma, Z., Qian, Z., Liao, J., Hussain, S., Liu, H., Qiu, H., Wu, J. and Hu, Z. (2022) ‘High-performance photodetectors based on the 2d sias/sns2 heterojunction’, Nanomaterials, 12(3), 371 (14 pp). Available at: https://doi.org/10.3390/nano12030371
dc.identifier.doihttps://doi.org/10.3390/nano12030371
dc.identifier.endpage14
dc.identifier.issn2079-4991
dc.identifier.issued3
dc.identifier.journaltitleNanomaterials
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/15362
dc.identifier.volume12
dc.language.isoenen
dc.publisherMDPI
dc.rights© 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectSiAs/SnS2
dc.subjectHeterojunction
dc.subjectPhotodetectors
dc.titleHigh-performance photodetectors based on the 2d sias/sns2 heterojunction
dc.typeArticle (peer-reviewed)en
dc.typeArticleen
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