Phase dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers
Manning, Robert J.
Corbett, Brian M.
The gain and phase dynamics of InAs/GaAs quantum dot amplifiers are studied using single and two-color heterodyne pump probe spectroscopy. The relaxation of the wetting layer carrier density is shown to have a strong effect on the phase dynamics of both ground and excited state transients, while having a much weaker effect on the gain dynamics. In addition, the dynamical alpha factor may also display a constant value after an initial transient. Such behavior is strongly encouraging for reduced pattern effect operation in high speed optical networks. (c) 2007 American Institute of Physics.(DOI: 10.1063/1.2823589)
Linewidth enhancement factor , Lasers , Alpha , Gain , Quantum dots , Ground states , Wetting , Carrier relaxation times , Nonlinear optical devices
O‘Driscoll, I., Piwonski, T., Houlihan, J., Huyet, G., Manning, R. J. and Corbett, B. (2007) 'Phase dynamics of InAs∕GaAs quantum dot semiconductor optical amplifiers', Applied Physics Letters, 91(26), pp. 263506. doi: 10.1063/1.2823589
© 2007 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O‘Driscoll, I., Piwonski, T., Houlihan, J., Huyet, G., Manning, R. J. and Corbett, B. (2007) 'Phase dynamics of InAs∕GaAs quantum dot semiconductor optical amplifiers', Applied Physics Letters, 91(26), pp. 263506 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2823589