Phase dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers
dc.contributor.author | O'Driscoll, Ian | |
dc.contributor.author | Piwonski, Tomasz | |
dc.contributor.author | Houlihan, John | |
dc.contributor.author | Huyet, Guillaume | |
dc.contributor.author | Manning, Robert J. | |
dc.contributor.author | Corbett, Brian M. | |
dc.contributor.funder | Science Foundation Ireland | |
dc.contributor.funder | Irish Research Council for Science, Engineering and Technology | |
dc.contributor.funder | Higher Education Authority | |
dc.contributor.funder | Sixth Framework Programme | |
dc.date.accessioned | 2017-07-28T11:47:33Z | |
dc.date.available | 2017-07-28T11:47:33Z | |
dc.date.issued | 2007 | |
dc.description.abstract | The gain and phase dynamics of InAs/GaAs quantum dot amplifiers are studied using single and two-color heterodyne pump probe spectroscopy. The relaxation of the wetting layer carrier density is shown to have a strong effect on the phase dynamics of both ground and excited state transients, while having a much weaker effect on the gain dynamics. In addition, the dynamical alpha factor may also display a constant value after an initial transient. Such behavior is strongly encouraging for reduced pattern effect operation in high speed optical networks. (c) 2007 American Institute of Physics.(DOI: 10.1063/1.2823589) | en |
dc.description.sponsorship | Science Foundation Ireland (Contract Nos. 01/FI/CO13 and 03/ IN.1/1340); European Commission (EU project TRIUMPH (IST-027638 STP)); Irish Research Council for Science, Engineering and Technology; Tyndall National Access Programme; Higher Education Authority (PRTLI program) | en |
dc.description.status | Peer reviewed | en |
dc.description.version | Published Version | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.articleid | 263506 | |
dc.identifier.citation | O‘Driscoll, I., Piwonski, T., Houlihan, J., Huyet, G., Manning, R. J. and Corbett, B. (2007) 'Phase dynamics of InAs∕GaAs quantum dot semiconductor optical amplifiers', Applied Physics Letters, 91(26), pp. 263506. doi: 10.1063/1.2823589 | en |
dc.identifier.doi | 10.1063/1.2823589 | |
dc.identifier.endpage | 3 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.issn | 1077-3118 | |
dc.identifier.issued | 26 | |
dc.identifier.journaltitle | Applied Physics Letters | en |
dc.identifier.startpage | 1 | |
dc.identifier.uri | https://hdl.handle.net/10468/4374 | |
dc.identifier.volume | 91 | |
dc.language.iso | en | en |
dc.publisher | AIP Publishing | en |
dc.relation.uri | http://aip.scitation.org/doi/abs/10.1063/1.2823589 | |
dc.rights | © 2007 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O‘Driscoll, I., Piwonski, T., Houlihan, J., Huyet, G., Manning, R. J. and Corbett, B. (2007) 'Phase dynamics of InAs∕GaAs quantum dot semiconductor optical amplifiers', Applied Physics Letters, 91(26), pp. 263506 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2823589 | en |
dc.subject | Linewidth enhancement factor | en |
dc.subject | Lasers | en |
dc.subject | Alpha | en |
dc.subject | Gain | en |
dc.subject | Quantum dots | en |
dc.subject | Ground states | en |
dc.subject | Wetting | en |
dc.subject | Carrier relaxation times | en |
dc.subject | Nonlinear optical devices | en |
dc.title | Phase dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers | en |
dc.type | Article (peer-reviewed) | en |
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