Impact of random alloy fluctuations on the carrier distribution in multicolor (In,Ga)N/GaN quantum well systems

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dc.contributor.authorO’Donovan, Michaelen
dc.contributor.authorFarrell, Patricioen
dc.contributor.authorMoatti, Julienen
dc.contributor.authorStreckenbach, Timoen
dc.contributor.authorKoprucki, Thomasen
dc.contributor.authorSchulz, Stefanen
dc.contributor.funderSustainable Energy Authority of Irelanden
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderDeutsche Forschungsgemeinschaften
dc.contributor.funderAustrian Science Funden
dc.date.accessioned2024-08-06T15:18:57Z
dc.date.available2024-08-06T15:18:57Z
dc.date.issued2024-02-27en
dc.description.abstractThe efficiency of (In,Ga)N-based light-emitting diodes (LEDs) is limited by the failure of holes to evenly distribute across the (In,Ga)N/Ga⁢N multiquantum well stack that forms the active region. To tackle this problem, it is important to understand carrier transport in these alloys. In this work, we study the impact that random alloy fluctuations have on the distribution of electrons and holes in such devices. To do so, an atomistic tight-binding model is employed to account for alloy fluctuations on a microscopic level and the resulting tight-binding energy landscape forms input to a quantum corrected drift-diffusion model. Here, quantum corrections are introduced via localization-landscape theory. Similar to experimental studies in the literature, we have focused on a multiquantum well system in which two of the three wells have the same In content, while the third well differs in In content. By changing the order of wells in this “multicolor” quantum well structure and looking at the relative radiative-recombination rates of the different emitted wavelengths, we (i) gain insight into the distribution of carriers in such a system and (ii) can compare our findings to trends observed in experiment. We focus on three factors and evaluate the impact that each have on carrier distribution: an electron blocking layer, quantum corrections, and random alloy fluctuations. We find that the electron blocking layer is of secondary importance. However, in order to recover experimentally observed features—namely, that the 𝑝-side quantum well dominates the light emission—both quantum corrections and random alloy fluctuations should be considered. The widely assumed homogeneous virtual-crystal approximation fails to capture the characteristic light emission distribution across a multiquantum well stack.en
dc.description.sponsorshipScience Foundation Ireland (No. 12/RC/2276 P2); Deutsche Forschungsgemeinschaft (EXC2046: MATH+ project AA2-15; NUMSEMIC, J89/2019; Labex CEMPI (ANR-11-LABX-0007-01)); Austrian Science Fund (Project 10.55776/F65)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleidp.024052en
dc.identifier.citationO’Donovan, M., Farrell, P., Moatti, J., Streckenbach, T., Koprucki, T. and Schulz, S. (2024) 'Impact of random alloy fluctuations on the carrier distribution in multicolor (In, Ga) N/Ga N quantum well systems', Physical Review Applied, 21(2), p.024052 (13pp). https://doi.org/10.1103/PhysRevApplied.21.024052en
dc.identifier.doihttps://doi.org/10.1103/PhysRevApplied.21.024052en
dc.identifier.endpage13en
dc.identifier.issn2331-7019en
dc.identifier.issued2en
dc.identifier.journaltitlePhysical Review Applieden
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/16181
dc.identifier.volume21en
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Career Development Award/17/CDA/4789(N)/IE/Nitride-based light emitters: From carrier localization and non-radiative recombination processes to quantum transport and device design/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Frontiers for the Future::Award/21/FFP-A/9014/IE/Boron Containing III-N Alloys for Next Generation Visible and UV Light Emitting Devices/en
dc.rights© 2024, American Physical Society. All rights reserved.en
dc.subjectCarrier transporten
dc.subjectAlloysen
dc.subject(In,Ga)N-based light-emitting diodes (LEDs)en
dc.subjectMultiquantum well systemen
dc.titleImpact of random alloy fluctuations on the carrier distribution in multicolor (In,Ga)N/GaN quantum well systemsen
dc.typeArticle (peer-reviewed)en
oaire.citation.issue2en
oaire.citation.volume21en
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