Very large phase shift of microwave signals in a 6 nm Hf x Zr 1− x O 2 ferroelectric at ±3 V

Thumbnail Image
3756.pdf(1.33 MB)
Submitted Version
Dragoman, Mircea
Modreanu, Mircea
Povey, Ian M.
Iordanescu, Sergiu
Aldrigo, Martino
Romanitan, Cosmin
Vasilache, Dan
Dinescu, Adrian
Dragoman, Daniela
Journal Title
Journal ISSN
Volume Title
IOP Publishing
Research Projects
Organizational Units
Journal Issue
In this letter, we report for the first time very large phase shifts of microwaves in the 1–10 GHz range, in a 1 mm long gold coplanar interdigitated structure deposited over a 6 nm Hf x Zr1−x O2 ferroelectric grown directly on a high resistivity silicon substrate. The phase shift is larger than 60° at 1 GHz and 13° at 10 GHz at maximum applied DC voltages of ±3 V, which can be supplied by a simple commercial battery. In this way, we demonstrate experimentally that the new ferroelectrics based on HfO2 could play an important role in the future development of wireless communication systems for very low power applications.
HfO2 , Ferroelectric , Phase shifter
Dragoman, M., Modreanu, M., Povey, I. M., Iordanescu, S., Aldrigo, M., Romanitan, C., Vasilache, D., Dinescu, A. and Dragoman, D. (2017) 'Very large phase shift of microwave signals in a 6 nm Hf x Zr 1− x O 2 ferroelectric at ±3 V', Nanotechnology, 28(38), 38LT04 (5pp). doi:10.1088/1361-6528/aa8425
© 2017 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at