The role of carrier injection in the breakdown mechanism of amorphous Al2O3 layers

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La Torraca, P.
Padovani, A.
Strand, J.
Shluger, A.
Larcher, L.
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We investigated the dielectric breakdown (BD) mechanism in amorphous alumina (a-Al2O3) metal-insulator-metal (MIM) stacks. Density functional theory (DFT) calculations reveal that oxygen vacancy ( VO) generation in a-Al2O3 occurs via thermochemical (TC) bond-breaking and, more efficiently, via newly discovered pathways enabled by charge trapping in under-coordinated Al ions (UC Als ) and in existing VOs . Multiscale simulations show the importance of these processes, which allow explaining the experimental BD dynamics in a-Al2O3, and provide valuable insights into the role of carriers’ injection in the degradation and reliability of high-k materials.
Amorphous alumina , Atomic defects , Breakdown , Carrier injection , High-k dielectric
La Torraca, P., Padovani, A., Strand, J., Shluger, A. and Larcher, L. (2023) 'The role of carrier injection in the breakdown mechanism of amorphous Al2O3 layers', IEEE Electron Device Letters, 45(2), pp. 236-239.
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