The role of carrier injection in the breakdown mechanism of amorphous Al2O3 layers

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dc.contributor.authorLa Torraca, P.en
dc.contributor.authorPadovani, A.en
dc.contributor.authorStrand, J.en
dc.contributor.authorShluger, A.en
dc.contributor.authorLarcher, L.en
dc.date.accessioned2024-02-28T09:19:57Z
dc.date.available2024-02-28T09:19:57Z
dc.date.issued2023-11-30en
dc.description.abstractWe investigated the dielectric breakdown (BD) mechanism in amorphous alumina (a-Al2O3) metal-insulator-metal (MIM) stacks. Density functional theory (DFT) calculations reveal that oxygen vacancy ( VO) generation in a-Al2O3 occurs via thermochemical (TC) bond-breaking and, more efficiently, via newly discovered pathways enabled by charge trapping in under-coordinated Al ions (UC Als ) and in existing VOs . Multiscale simulations show the importance of these processes, which allow explaining the experimental BD dynamics in a-Al2O3, and provide valuable insights into the role of carriers’ injection in the degradation and reliability of high-k materials.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLa Torraca, P., Padovani, A., Strand, J., Shluger, A. and Larcher, L. (2023) 'The role of carrier injection in the breakdown mechanism of amorphous Al2O3 layers', IEEE Electron Device Letters, 45(2), pp. 236-239. https://doi.org/10.1109/LED.2023.3337882en
dc.identifier.doihttps://doi.org/10.1109/led.2023.3337882en
dc.identifier.eissn1558-0563en
dc.identifier.endpage239en
dc.identifier.issn0741-3106en
dc.identifier.issued2en
dc.identifier.journaltitleIEEE Electron Device Lettersen
dc.identifier.startpage236en
dc.identifier.urihttps://hdl.handle.net/10468/15591
dc.identifier.volume45en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.rights© 2023, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectAmorphous aluminaen
dc.subjectAtomic defectsen
dc.subjectBreakdownen
dc.subjectCarrier injectionen
dc.subjectHigh-k dielectricen
dc.titleThe role of carrier injection in the breakdown mechanism of amorphous Al2O3 layersen
dc.typeArticle (peer-reviewed)en
oaire.citation.issue2en
oaire.citation.volume45en
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