Reduced electric field in junctionless transistors

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dc.contributor.authorColinge, Jean-Pierre
dc.contributor.authorLee, Chi-Woo
dc.contributor.authorFerain, Isabelle
dc.contributor.authorAkhavan, Nima Dehdashti
dc.contributor.authorYan, Ran
dc.contributor.authorRazavi, Pedram
dc.contributor.authorYu, Ran
dc.contributor.authorNazarov, Alexei N.
dc.contributor.authorDoria, Rodrigo T.
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderSeventh Framework Programme
dc.date.accessioned2017-07-28T11:22:09Z
dc.date.available2017-07-28T11:22:09Z
dc.date.issued2010
dc.description.abstractThe electric field perpendicular to the current flow is found to be significantly lower in junctionless transistors than in regular inversion-mode or accumulation-mode field-effect transistors. Since inversion channel mobility in metal-oxide-semionductor transistors is reduced by this electric field, the low field in junctionless transistor may give them an advantage in terms of current drive for nanometer-scale complementary metal-oxide semiconductor applications. This observation still applies when quantum confinement is present. (C) 2010 American Institute of Physics. (doi:10.1063/1.3299014)en
dc.description.sponsorshipScience Foundation Ireland (Grant Np. 05/IN/I888)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid73510
dc.identifier.citationColinge, J.-P., Lee, C.-W., Ferain, I., Akhavan, N. D., Yan, R., Razavi, P., Yu, R., Nazarov, A. N. and Doria, R. T. (2010) 'Reduced electric field in junctionless transistors', Applied Physics Letters, 96(7), pp. 073510. doi: 10.1063/1.3299014en
dc.identifier.doi10.1063/1.3299014
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued7
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4346
dc.identifier.volume96
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216171/EU/Silicon-based nanostructures and nanodevices for long term nanoelectronics applications/NANOSIL
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216373/EU/European platform for low-power applications on Silicon-on-Insulator Technology/EUROSOI+
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3299014
dc.rights© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Colinge, J.-P., Lee, C.-W., Ferain, I., Akhavan, N. D., Yan, R., Razavi, P., Yu, R., Nazarov, A. N. and Doria, R. T. (2010) 'Reduced electric field in junctionless transistors', Applied Physics Letters, 96(7), pp. 073510 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3299014en
dc.subjectTrigate soi mosfetsen
dc.subjectInversion layer mobilityen
dc.subjectSi mosfetsen
dc.subjectUniversalityen
dc.subjectSiliconen
dc.subjectCMOS integrated circuitsen
dc.subjectElectric fieldsen
dc.subjectDopingen
dc.subjectMOSFETsen
dc.subjectCarrier mobilityen
dc.titleReduced electric field in junctionless transistorsen
dc.typeArticle (peer-reviewed)en
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