Chemical and electrical characterization of the HfO2/InAlAs interface
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Date
2013
Authors
Brennan, B.
Galatage, R. V.
Thomas, K.
Pelucchi, Emanuele
Hurley, Paul K.
Kim, J.
Hinkle, C. L.
Vogel, E. M.
Wallace, R. M.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
InAlAs has the potential to be used as a barrier layer in buried channel quantum well field effect transistor devices due to favorable lattice-matching and carrier confinement properties with InGaAs. Field effect device structures of this nature may also require a high-k oxide deposited on the InAlAs surface to reduce leakage current. This study investigates the impact of surface preparations and atomic layer deposition of HfO2 on these surfaces using x-ray photoelectron spectroscopy to analyse the chemical interactions taking place, as well as the electrical performance of associated capacitor devices. A large concentration of As related surface features is observed at the InAlAs surface, and is attributed to a large D-it response in electrical measurements. (C) 2013 AIP Publishing LLC.
Description
Keywords
Surface states , Oxide surfaces , Surface treatments , Atomic layer deposition , X-ray photoelectron spectroscopy
Citation
Brennan, B., Galatage, R. V., Thomas, K., Pelucchi, E., Hurley, P. K., Kim, J., Hinkle, C. L., Vogel, E. M. and Wallace, R. M. (2013) 'Chemical and electrical characterization of the HfO2/InAlAs interface', Journal of Applied Physics, 114(10), 104103 (8pp). doi: 10.1063/1.4821021
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Copyright
© 2013, AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Brennan, B., Galatage, R. V., Thomas, K., Pelucchi, E., Hurley, P. K., Kim, J., Hinkle, C. L., Vogel, E. M. and Wallace, R. M. (2013) 'Chemical and electrical characterization of the HfO2/InAlAs interface', Journal of Applied Physics, 114(10), 104103 (8pp). doi: 10.1063/1.4821021 and may be found at http://aip.scitation.org/doi/10.1063/1.4821021