Chemical and electrical characterization of the HfO2/InAlAs interface

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dc.contributor.authorBrennan, B.
dc.contributor.authorGalatage, R. V.
dc.contributor.authorThomas, K.
dc.contributor.authorPelucchi, Emanuele
dc.contributor.authorHurley, Paul K.
dc.contributor.authorKim, J.
dc.contributor.authorHinkle, C. L.
dc.contributor.authorVogel, E. M.
dc.contributor.authorWallace, R. M.
dc.contributor.funderSemiconductor Research Corporation
dc.contributor.funderNational Science Foundation
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-09-20T10:06:33Z
dc.date.available2017-09-20T10:06:33Z
dc.date.issued2013
dc.description.abstractInAlAs has the potential to be used as a barrier layer in buried channel quantum well field effect transistor devices due to favorable lattice-matching and carrier confinement properties with InGaAs. Field effect device structures of this nature may also require a high-k oxide deposited on the InAlAs surface to reduce leakage current. This study investigates the impact of surface preparations and atomic layer deposition of HfO2 on these surfaces using x-ray photoelectron spectroscopy to analyse the chemical interactions taking place, as well as the electrical performance of associated capacitor devices. A large concentration of As related surface features is observed at the InAlAs surface, and is attributed to a large D-it response in electrical measurements. (C) 2013 AIP Publishing LLC.en
dc.description.sponsorshipNational Science Foundation [ECCS [0925844]en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid104103
dc.identifier.citationBrennan, B., Galatage, R. V., Thomas, K., Pelucchi, E., Hurley, P. K., Kim, J., Hinkle, C. L., Vogel, E. M. and Wallace, R. M. (2013) 'Chemical and electrical characterization of the HfO2/InAlAs interface', Journal of Applied Physics, 114(10), 104103 (8pp). doi: 10.1063/1.4821021en
dc.identifier.doi10.1063/1.4821021
dc.identifier.endpage8
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issued10
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.urihttps://hdl.handle.net/10468/4724
dc.identifier.volume114
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI US Ireland R&D Partnership/08/US/I1546/IE/Future Oxides and Channel Materials for Ultimate Scaling (FOCUS)/
dc.relation.urihttp://aip.scitation.org/doi/10.1063/1.4821021
dc.rights© 2013, AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Brennan, B., Galatage, R. V., Thomas, K., Pelucchi, E., Hurley, P. K., Kim, J., Hinkle, C. L., Vogel, E. M. and Wallace, R. M. (2013) 'Chemical and electrical characterization of the HfO2/InAlAs interface', Journal of Applied Physics, 114(10), 104103 (8pp). doi: 10.1063/1.4821021 and may be found at http://aip.scitation.org/doi/10.1063/1.4821021en
dc.subjectSurface statesen
dc.subjectOxide surfacesen
dc.subjectSurface treatmentsen
dc.subjectAtomic layer depositionen
dc.subjectX-ray photoelectron spectroscopyen
dc.titleChemical and electrical characterization of the HfO2/InAlAs interfaceen
dc.typeArticle (peer-reviewed)en
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