Si(100)-SiO2 interface properties following rapid thermal processing

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dc.contributor.authorO'Sullivan, B. J.
dc.contributor.authorHurley, Paul K.
dc.contributor.authorLeveugle, C.
dc.contributor.authorDas, J. H.
dc.date.accessioned2017-07-12T09:11:18Z
dc.date.available2017-07-12T09:11:18Z
dc.date.issued2001-04
dc.description.abstractAn experimental examination of the properties of the Si(100)-SiO2 interface measured following rapid thermal processing (RTP) is presented. The interface properties have been examined using high frequency and quasi-static capacitance-voltage (CV) analysis of metal-oxide-silicon (MOS) capacitor structures immediately following either rapid thermal oxidation (RTO) or rapid thermal annealing (RTA). The experimental results reveal a characteristic peak in the CV response measured following dry RTO and RTA (T > 800 degreesC), as the Fermi level at the Si(100)-SiO2 interface approaches the conduction band edge. Analysis of the QSCV responses reveals a high interface state density across the energy gap following dry RTO and RTA processing, with a characteristic peak density in the range 5.5x10(12) to 1.7x10(13) cm(-2) eV(-1) located at approximately 0.85-0.88 eV above the valence band edge. When the background density of states for a hydrogen-passivated interface is subtracted, another peak of lower density (3x10(12) to 7x10(12) cm(-2) eV(-1)) is observed at approximately 0.25-0.33 eV above the valence band edge. The experimental results point to a common interface state defect present after processes involving rapid cooling (10(1)-10(2) degreesC/s) from a temperature of 800 degreesC or above, in a hydrogen free ambient. This work demonstrates that the interface states measured following RTP (T > 800 degreesC) are the net contribution of the P-b0/P-b1 silicon dangling bond defects for the oxidized Si(100) orientation. An important conclusion arising from this work is that the primary effect of an RTA in nitrogen (600-1050 degreesC) is to cause hydrogen desorption from pre-existing P-b0/P-b1 silicon dangling bond defects. The implications of this work to the study of the Si-SiO2 interface, and the technological implications for silicon based MOS processes, are briefly discussed. The significance of these new results to thin oxide growth and optimization by RTO are also considered.en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationO’Sullivan, B. J., Hurley, P. K., Leveugle, C. and Das, J. H. (2001) 'Si(100)–SiO2 interface properties following rapid thermal processing', Journal of Applied Physics, 89(7), pp. 3811-3820. doi: 10.1063/1.1343897en
dc.identifier.doi10.1063/1.1343897
dc.identifier.endpage3820
dc.identifier.issn0021-8979
dc.identifier.issued7
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage3811
dc.identifier.urihttps://hdl.handle.net/10468/4239
dc.identifier.volume89
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.1343897
dc.rights© 2001 American Institute of Physics, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Sullivan, B. J., Hurley, P. K., Leveugle, C. and Das, J. H. (2001) 'Si(100)–SiO2 interface properties following rapid thermal processing', Journal of Applied Physics, 89(7), pp. 3811-3820 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1343897en
dc.subjectElectron-spin-resonanceen
dc.subjectP-b centersen
dc.subjectSi/sio2 interfaceen
dc.subjectBoron-diffusionen
dc.subjectGate oxidesen
dc.subjectBand-gapen
dc.subjectSiliconen
dc.subject(111)si/sio2en
dc.subjectDefectsen
dc.subject(100)si/sio2en
dc.titleSi(100)-SiO2 interface properties following rapid thermal processingen
dc.typeArticle (peer-reviewed)en
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