Detection of inhibitory effects in the generation of breakdown spots in HfO2-based MIM devices

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dc.check.date2021-05-29
dc.check.infoAccess to this article is restricted until 24 months after publication by request of the publisheren
dc.contributor.authorMuñoz-Gorriz, J.
dc.contributor.authorMonaghan, Scott
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorSuñé, Jordi
dc.contributor.authorHurley, Paul K.
dc.contributor.authorMiranda, Enrique
dc.contributor.funderMinisterio de Economía, Industria y Competitividad, Gobierno de Españaen
dc.date.accessioned2019-06-18T15:20:32Z
dc.date.available2019-06-18T15:20:32Z
dc.date.issued2019-05-29
dc.date.updated2019-06-18T15:15:24Z
dc.description.abstractIn this work, the connection between the generation of catastrophic breakdown (BD) spots in metal-insulator-metal capacitors with a high-permittivity dielectric film (HfO2) and their spatial distribution was investigated. To gain insight into this issue, large area devices (104 μm2) were constant voltage stressed at high electric fields (3.5 MV/cm) with the aim of generating a large number of spots in a single device. The set of BD spots was analysed as a point pattern with attributes (their sizes) using the methods of spatial statistics. Our study reveals that beyond the visible damage on the top metal electrode, the spots exhibit soft inhibitory regions around them where the creation of new spots is less likely. The origin of these inhibitory regions is ascribed to structural modifications of the dielectric layer in the vicinity of the spots caused by the huge thermal effects occurring at the very moment of the BD event.en
dc.description.sponsorshipMinisterio de Economía, Industria y Competitividad, Gobierno de España (project TEC2017-84321-C4-4-R)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid111023en
dc.identifier.citationMuñoz-Gorriz, J., Monaghan, S., Cherkaoui, K., Suñé, J., Hurley, P. K. and Miranda, E. (2019) 'Detection of inhibitory effects in the generation of breakdown spots in HfO2-based MIM devices', Microelectronic Engineering, 215, 111023 (6 pp). doi: 10.1016/j.mee.2019.111023en
dc.identifier.doi10.1016/j.mee.2019.111023en
dc.identifier.endpage6en
dc.identifier.issn0167-9317
dc.identifier.journaltitleMicroelectronic Engineeringen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/8067
dc.identifier.volume215en
dc.language.isoenen
dc.publisherElsevieren
dc.relation.urihttp://www.sciencedirect.com/science/article/pii/S0167931719301741
dc.rights© 2019 Elsevier B.V. All rights reserved. This manuscript version is made available under the CC-BY-NC-ND 4.0 licenseen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectOxide breakdownen
dc.subjectReliabilityen
dc.subjectMIMen
dc.subjectSpatial statisticsen
dc.titleDetection of inhibitory effects in the generation of breakdown spots in HfO2-based MIM devicesen
dc.typeArticle (peer-reviewed)en
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