Properties of homo- and hetero-Schottky junctions from first principle calculations
dc.contributor.author | Greer, James C. | |
dc.contributor.author | Blom, Anders | |
dc.contributor.author | Ansari, Lida | |
dc.date.accessioned | 2020-02-18T12:46:00Z | |
dc.date.available | 2020-02-18T12:46:00Z | |
dc.date.issued | 2018-09-24 | |
dc.description.abstract | Electronic structure calculations for a homo-material semimetal (thick Sn)/semiconductor (thin Sn) heterodimensional junction and two conventional metal (Ag or Pt)/silicon hetero-material junctions are performed. Charge distributions and local density of states are examined to compare the physics of junctions formed by quantum confinement in a homo-material, heterodimensional semimetal junction with that of conventional Schottky hetero-material junctions. Relative contributions to the Schottky barrier heights are described in terms of the interface dipoles arising due to charge transfer at the interface and the effects of metal induced gap states extending into the semiconducting regions. Although the importance of these physical mechanisms vary for the three junctions, a single framework describing the junction energetics captures the behaviors of both the heterodimensional semimetal junction and the more conventional metal/semiconductor junctions. | en |
dc.description.status | Peer reviewed | en |
dc.description.version | Accepted Version | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.articleid | 414003 | en |
dc.identifier.citation | Greer, J. C., Blom, A. and Ansari, L. (2018) 'Properties of homo- and hetero-Schottky junctions from first principle calculations', Journal of Physics: Condensed Matter, 30(41), 414003 (8 pp). doi: 10.1088/1361-648x/aadbed | en |
dc.identifier.doi | 10.1088/1361-648x/aadbed | en |
dc.identifier.endpage | 8 | en |
dc.identifier.issn | 0953-8984 | |
dc.identifier.issn | 1361-648X | |
dc.identifier.issued | 41 | en |
dc.identifier.journaltitle | Journal of Physics: Condensed Matter | en |
dc.identifier.startpage | 1 | en |
dc.identifier.uri | https://hdl.handle.net/10468/9658 | |
dc.identifier.volume | 30 | en |
dc.language.iso | en | en |
dc.publisher | IOP Publishing | en |
dc.relation.uri | https://iopscience.iop.org/article/10.1088/1361-648X/aadbed/meta | |
dc.rights | © 2018 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics: Condensed Matter. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/1361-648X/aadbed . As the Version of Record of this article has been published on a subscription basis, this Accepted Manuscript will be available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period. | en |
dc.rights.uri | https://creativecommons.org/licences/by-nc-nd/3.0 | en |
dc.subject | Ab initio calculations | en |
dc.subject | Electron transport | en |
dc.subject | Electronic structure | en |
dc.subject | Quantum confinement | en |
dc.subject | Schottky junction | en |
dc.subject | Semi-metal | en |
dc.subject | Interface states | en |
dc.subject | Calculations | en |
dc.subject | Charge transfer | en |
dc.subject | Electron transport properties | en |
dc.subject | Electronic structure | en |
dc.subject | Metalloids | en |
dc.subject | Quantum chemistry | en |
dc.subject | Quantum confinement | en |
dc.subject | Schottky barrier diodes | en |
dc.subject | Semiconductor junctions | en |
dc.title | Properties of homo- and hetero-Schottky junctions from first principle calculations | en |
dc.type | Article (peer-reviewed) | en |
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