Highly-ordered growth of solution-processable ZnO for thin film transistors

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dc.contributor.authorBuckley, Darragh
dc.contributor.authorMcNulty, David
dc.contributor.authorZubialevich, Vitaly Z.
dc.contributor.authorParbrook, Peter J.
dc.contributor.authorO'Dwyer, Colm
dc.contributor.funderIrish Research Councilen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2018-05-22T11:32:47Z
dc.date.available2018-05-22T11:32:47Z
dc.date.issued2017-05
dc.date.updated2018-05-16T00:48:29Z
dc.description.abstractWe demonstrate that crystalline, epitaxial-like and highly ordered ZnO thin films and quasi-superlattice structures can be achieved from a precursor liquid at relatively low temperature via spin-coating. The synthesised films are smooth, stoichiometric ZnO with controllable thickness. An iterative layer-by-layer coating schematic is employed to demonstrate the effects of film thickness on structure, morphology as well as the surface and internal defects. Characterisation of the crystallinity, morphology, O-vacancy formation, stoichiometry, surface roughness and thickness variation was determined through X-ray diffraction, scanning and transmission electron and atomic force microscopy, X-ray photoelectron and photoluminescence spectroscopy. We demonstrate that iterative spin-coating of deposited ZnO films results in a transition in crystal texture with increasing thickness (number of layers) from the [ ] m-plane to the [ ] c-plane. The films attain a c-axis preferential orientation, with no other crystalline peaks present. Results show that the film’s surface morphology was very smooth, with average rms roughness <0.15 nm. Examination of these films also shows the consistency of the surface composition and defect level while highlighting the effect of temperature and cumulative annealing condition on the internal defect concentration.en
dc.description.sponsorshipIrish Research Council (award GOIPG/2014/206);en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBuckley, D., McNulty, D., Zubialevich, V. Z., Parbrook, P. J. and O'Dwyer, C. (2017) 'Highly-Ordered Growth of Solution-Processable ZnO for Thin Film Transistors', ECS Transactions, 77(4), pp. 99-107. doi: 10.1149/07704.0099ecsen
dc.identifier.doi10.1149/07704.0099ecst
dc.identifier.endpage107en
dc.identifier.issn1938-5862
dc.identifier.issn1938-6737
dc.identifier.journaltitleECS Transactionsen
dc.identifier.startpage99en
dc.identifier.urihttps://hdl.handle.net/10468/6173
dc.identifier.volume77en
dc.language.isoenen
dc.publisherElectrochemical Societyen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Technology and Innovation Development Award (TIDA)/15/TIDA/2893/IE/Advanced Battery Materials for High Volumetric Energy Density Li-ion Batteries for Remote Off-Grid Power/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2581/IE/Diffractive optics and photonic probes for efficient mouldable 3D printed battery skin materials for portable electronic devices/en
dc.relation.urihttp://ecst.ecsdl.org/content/77/4/99.abstract
dc.rights© 2017 ECS - The Electrochemical Societyen
dc.subjectThin filmsen
dc.subjectAnnealing conditionen
dc.subjectEffect of temperatureen
dc.subjectPreferential orientationen
dc.subjectSolution processableen
dc.subjectSuper-lattice structuresen
dc.subjectThickness variationen
dc.subjectTransmission electronen
dc.subjectX-ray photoelectronsen
dc.subjectAtomic force microscopyen
dc.subjectCoatingsen
dc.subjectCrystalline materialsen
dc.subjectFilm growthen
dc.subjectMetallic filmsen
dc.subjectMorphologyen
dc.subjectPhotoluminescence spectroscopyen
dc.subjectSurface defectsen
dc.subjectSurface roughnessen
dc.subjectTemperatureen
dc.subjectThin film circuitsen
dc.subjectX ray diffractionen
dc.subjectZinc oxideen
dc.titleHighly-ordered growth of solution-processable ZnO for thin film transistorsen
dc.typeArticle (peer-reviewed)en
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