High bandwidth freestanding semipolar (11–22) InGaN/GaN light-emitting diodes

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dc.contributor.authorQuan, Zhiheng
dc.contributor.authorDinh, Duc V.
dc.contributor.authorPresa, Silvino
dc.contributor.authorRoycroft, Brendan
dc.contributor.authorFoley, Ann
dc.contributor.authorAkhter, Mahbub
dc.contributor.authorO'Mahony, Donagh
dc.contributor.authorMaaskant, Pleun P.
dc.contributor.authorCaliebe, Marian
dc.contributor.authorScholz, Ferdinand
dc.contributor.authorParbrook, Peter J.
dc.contributor.authorCorbett, Brian M.
dc.date.accessioned2016-11-09T12:28:11Z
dc.date.available2016-11-09T12:28:11Z
dc.date.issued2016-08-26
dc.description.abstractFreestanding semipolar (11–22) indium gallium nitride (InGaN) multiplequantum-well light-emitting diodes (LEDs) emitting at 445 nm have been realized by the use of laser lift-off (LLO) of the LEDs from a 50- m-thick GaN layer grown on a patterned (10–12) r -plane sapphire substrate (PSS). The GaN grooves originating from the growth on PSS were removed by chemical mechanical polishing. The 300 m × 300 m LEDs showed a turn-on voltage of 3.6 V and an output power through the smooth substrate of 0.87 mW at 20 mA. The electroluminescence spectrum of LEDs before and after LLO showed a stronger emission intensity along the [11–23]InGaN/GaN direction. The polarization anisotropy is independent of the GaN grooves, with a measured value of 0.14. The bandwidth of the LEDs is in excess of 150 MHz at 20 mA, and back-to-back transmission of 300 Mbps is demonstrated, making these devices suitable for visible light communication (VLC) applications.en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid1601808
dc.identifier.citationQuan, Z., Dinh, D.V., Presa, S., Roycroft, B., Foley, A., Akhter, M., O'Mahony, D., Maaskant, P.P., Caliebe, M., Scholz, F. and Parbrook, P.J. (2016) ‘High bandwidth freestanding semipolar (11–22) InGaN/GaN light-emitting diodes’, IEEE Photonics Journal, 8(5), 1601808 (8pp). doi:10.1109/JPHOT.2016.2596245en
dc.identifier.doi10.1109/JPHOT.2016.2596245
dc.identifier.endpage8en
dc.identifier.issn1943-0655
dc.identifier.issued5en
dc.identifier.journaltitleIEEE Photonics Journalen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/3258
dc.identifier.volume8en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineersen
dc.rights© 2016, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.en
dc.subjectLight-emitting diodesen
dc.subjectLEDsen
dc.subjectOptoelectronic materialsen
dc.subjectSemipolar gallium nitrideen
dc.subjectGaNen
dc.subjectLaser lift-offen
dc.subjectLLOen
dc.subjectMetal organic vapor phase epitaxyen
dc.subjectMOVPEen
dc.titleHigh bandwidth freestanding semipolar (11–22) InGaN/GaN light-emitting diodesen
dc.typeArticle (peer-reviewed)en
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