On the multifaceted journey for the invention of epitaxial quantum dots

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dc.check.date2025-10-19en
dc.check.infoAccess to this article is restricted until 24 months after publication by request of the publisher.en
dc.contributor.authorPelucchi, Emanueleen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2023-11-03T11:20:58Z
dc.date.available2023-11-03T11:20:58Z
dc.date.issued2023-10-19en
dc.description.abstractEpitaxial semiconductor quantum dots have been, in the last 40 years or so, at the center of the research effort of a large community. The focus being on “semiconductor physics and devices”, in view of the broad applications and potential, e.g., for efficient temperature insensitive lasers at telecom wavelengths, or as “artificial atoms” for quantum information processing. Our manuscript aims at addressing, with an historical perspective, the specifics of (III-V) epitaxial quantum dot early developments (largely for light emitting) and subsequent years. We will not only highlight the variety of epitaxial structures and methods, but also, intentionally glancing a didactic approach, discuss aspects that are, in general, little acknowledged or debated in the present literature. The analyses will also naturally bring us to examine some of current challenges, in a field which, despite sensational achievements, is, remarkably, still far from being mature in its developments and applications.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid100603en
dc.identifier.citationPelucchi, E. (2023) 'On the multifaceted journey for the invention of epitaxial quantum dots', Progress in Crystal Growth and Characterization of Materials, 69(2-4), 100603 (9pp). doi: 10.1016/j.pcrysgrow.2023.100603en
dc.identifier.doi10.1016/j.pcrysgrow.2023.100603en
dc.identifier.eissn1878-4208en
dc.identifier.endpage9en
dc.identifier.issn0960-8974en
dc.identifier.issued2-4en
dc.identifier.journaltitleProgress in Crystal Growth and Characterization of Materialsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/15184
dc.identifier.volume69en
dc.language.isoenen
dc.publisherElsevier Ltd.en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/2864/IE/Quantum control of nanostructures for quantum networking/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres Programme::Phase 2/12/RC/2276_P2/IE/IPIC_Phase 2/en
dc.rights© 2023, Elsevier Ltd. All rights reserved. This manuscript version is made available under the CC BY-NC-ND 4.0 license.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectQuantum dotsen
dc.subjectStranski Krastanoven
dc.subjectEpitaxyen
dc.subjectMBEen
dc.subjectMOVPEen
dc.subjectSurface organizationen
dc.titleOn the multifaceted journey for the invention of epitaxial quantum dotsen
dc.typeArticle (peer-reviewed)en
oaire.citation.issue2-4en
oaire.citation.volume69en
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