Electrochemical pore formation in InP: Understanding and controlling pore morphology.
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Date
2017-01
Authors
Quill, Nathan
Green, Laura
O'Dwyer, Colm
Buckley, D. Noel
Lynch, Robert P.
Journal Title
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Volume Title
Publisher
Electrochemical Society
Published Version
Abstract
Pores formed anodically in InP at different temperatures, electrolyte (KOH) concentrations, carrier concentrations and current densities exhibit significant pore width variations. The pore width decreases as the temperature, carrier concentration or current density are increased. The pore width also decreases when the KOH concentration is increased up to 9 mol dm-3, but increases slightly as the concentration is increased further. These pore width variations are explained by a three-step model for pore formation based on competition in kinetics between the different steps in the etching mechanism. The variation of pore width with current density is explained explicitly in terms of the crystallographic etching mechanism and this is supported by observation of the different crystallographic features of the pore cross section at different current densities.
Description
Keywords
Carrier concentration , Crystallographic etchings , Etching mechanism , KOH concentration , Pore formation , Pore morphology , Pore width , Three step models , Current density , Electrolytes , Etching , Pore size
Citation
Quill, N., Green, L., O'Dwyer, C., Buckley, D. N. and Lynch, R. P. (2017) 'Electrochemical Pore Formation in InP: Understanding and Controlling Pore Morphology', ECS Transactions, 75(40), pp. 29-43. doi: 10.1149/07540.0029ecst
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© 2017 ECS - The Electrochemical Society