Electrochemical pore formation in InP: Understanding and controlling pore morphology.

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dc.contributor.authorQuill, Nathan
dc.contributor.authorGreen, Laura
dc.contributor.authorO'Dwyer, Colm
dc.contributor.authorBuckley, D. Noel
dc.contributor.authorLynch, Robert P.
dc.date.accessioned2018-05-22T11:03:22Z
dc.date.available2018-05-22T11:03:22Z
dc.date.issued2017-01
dc.date.updated2018-05-16T00:43:03Z
dc.description.abstractPores formed anodically in InP at different temperatures, electrolyte (KOH) concentrations, carrier concentrations and current densities exhibit significant pore width variations. The pore width decreases as the temperature, carrier concentration or current density are increased. The pore width also decreases when the KOH concentration is increased up to 9 mol dm-3, but increases slightly as the concentration is increased further. These pore width variations are explained by a three-step model for pore formation based on competition in kinetics between the different steps in the etching mechanism. The variation of pore width with current density is explained explicitly in terms of the crystallographic etching mechanism and this is supported by observation of the different crystallographic features of the pore cross section at different current densities.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationQuill, N., Green, L., O'Dwyer, C., Buckley, D. N. and Lynch, R. P. (2017) 'Electrochemical Pore Formation in InP: Understanding and Controlling Pore Morphology', ECS Transactions, 75(40), pp. 29-43. doi: 10.1149/07540.0029ecsten
dc.identifier.doi10.1149/07540.0029ecst
dc.identifier.endpage43en
dc.identifier.issn1938-5862
dc.identifier.issn1938-6737
dc.identifier.issued40en
dc.identifier.journaltitleECS Transactionsen
dc.identifier.startpage29en
dc.identifier.urihttps://hdl.handle.net/10468/6171
dc.identifier.volume75en
dc.language.isoenen
dc.publisherElectrochemical Societyen
dc.relation.urihttp://ecst.ecsdl.org/content/75/40/29.full.pdf
dc.rights© 2017 ECS - The Electrochemical Societyen
dc.subjectCarrier concentrationen
dc.subjectCrystallographic etchingsen
dc.subjectEtching mechanismen
dc.subjectKOH concentrationen
dc.subjectPore formationen
dc.subjectPore morphologyen
dc.subjectPore widthen
dc.subjectThree step modelsen
dc.subjectCurrent densityen
dc.subjectElectrolytesen
dc.subjectEtchingen
dc.subjectPore sizeen
dc.titleElectrochemical pore formation in InP: Understanding and controlling pore morphology.en
dc.typeArticle (peer-reviewed)en
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