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Physics-based modelling of MoS2: the layered structure concept
Hurley, Paul K.
Recently, continuum-based Technology Computer Aided Design (TCAD) device models have been used to investigate the advantages and limitations of Transition Metal Dichalcogenides (TMDs), as one of the promising families of 2D-semicoductors. Nevertheless, a complete physics-based model is still missing. In this work, TCAD methodology is advanced for MoS2 devices, as the material system is modelled considering a structure formed by layers of MoS2 and Van-der Waals gaps, as opposed to a continuous semiconductor, The structure is benchmarked against previous experimental data and the behavior of thin and multilayer MoS2 is studied. Then, the model is used to evaluate the electron distribution and current density in a MoS2-based Field-Effect Transistor (FET). The analysis of the layered-structure provides additional understanding of the electrostatics and carrier transport in 2D semiconductors.
Technology Computer Aided Design (TCAD) , Transition Metal Dichalcogenides (TMDs) , MoS2 , Field-Effect Transistor (FET) , Semiconductors
Gioele, M., Paul, K. H. and Ray, D. (2019) (2019) 'Physics-based modelling of MoS2: the layered structure concept'. Semiconductor Science and Technology, In Press, doi: 10.1088/1361-6641/ab121b
© 2019 IOP Publishing. This is an author-created, un-copyedited version of an article accepted for publication in Semiconductor Science and Technology. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6641/ab121b As the Version of Record of this article is going to be published on a subscription basis, this Accepted Manuscript will be available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period.