Physics-based modelling of MoS2: the layered structure concept

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dc.check.date2020-03-21
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorMirabelli, Gioele
dc.contributor.authorHurley, Paul K.
dc.contributor.authorDuffy, Ray
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderIrish Research Councilen
dc.contributor.funderHigher Education Authorityen
dc.date.accessioned2019-04-15T13:51:20Z
dc.date.available2019-04-15T13:51:20Z
dc.date.issued2019-03-21
dc.date.updated2019-04-15T13:38:07Z
dc.description.abstractRecently, continuum-based Technology Computer Aided Design (TCAD) device models have been used to investigate the advantages and limitations of Transition Metal Dichalcogenides (TMDs), as one of the promising families of 2D-semicoductors. Nevertheless, a complete physics-based model is still missing. In this work, TCAD methodology is advanced for MoS2 devices, as the material system is modelled considering a structure formed by layers of MoS2 and Van-der Waals gaps, as opposed to a continuous semiconductor, The structure is benchmarked against previous experimental data and the behavior of thin and multilayer MoS2 is studied. Then, the model is used to evaluate the electron distribution and current density in a MoS2-based Field-Effect Transistor (FET). The analysis of the layered-structure provides additional understanding of the electrostatics and carrier transport in 2D semiconductors.en
dc.description.sponsorshipIrish Research Council (Postgraduate Scholarship EPSPG/2015/6); Higher Education Authority (Programme for Research in Third Level Institutions in Ireland under Grant Agreement no. HEA PRTLI5)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationGioele, M., Paul, K. H. and Ray, D. (2019) (2019) 'Physics-based modelling of MoS2: the layered structure concept'. Semiconductor Science and Technology, In Press, doi: 10.1088/1361-6641/ab121ben
dc.identifier.doi10.1088/1361-6641/ab121ben
dc.identifier.eissn1361-6641
dc.identifier.endpage7en
dc.identifier.issn1361-6641
dc.identifier.journaltitleSemiconductor Science and Technologyen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/7766
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI US Ireland R&D Partnership/13/US/I2862/IE/Understanding the Nature of Interfaces in Two Dimensional Electronic Devises (UNITE)/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3131/IE/Investigating Emerging 2D Semiconductor Technology/en
dc.relation.urihttps://iopscience.iop.org/article/10.1088/1361-6641/ab121b
dc.rights© 2019 IOP Publishing. This is an author-created, un-copyedited version of an article accepted for publication in Semiconductor Science and Technology. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6641/ab121b As the Version of Record of this article is going to be published on a subscription basis, this Accepted Manuscript will be available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/en
dc.subjectTechnology Computer Aided Design (TCAD)en
dc.subjectTransition Metal Dichalcogenides (TMDs)en
dc.subjectMoS2en
dc.subjectField-Effect Transistor (FET)en
dc.subjectSemiconductorsen
dc.titlePhysics-based modelling of MoS2: the layered structure concepten
dc.typeArticle (non peer-reviewed)en
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