Properties of rf-sputtered indium-tin-oxynitride thin films

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dc.contributor.authorAperathitis, E.
dc.contributor.authorBender, M.
dc.contributor.authorCimalla, V.
dc.contributor.authorEcke, G.
dc.contributor.authorModreanu, Mircea
dc.date.accessioned2017-07-12T09:11:18Z
dc.date.available2017-07-12T09:11:18Z
dc.date.issued2003-07
dc.description.abstractIndium-tin-oxide (ITO) and indium-tin-oxynitride (ITON) thin films have been fabricated by rf-sputtering in plasma containing Ar or a mixture of Ar and N-2, respectively. The structural, electrical and optical properties of ITON films were examined and compared with those of ITO films. The microstructure of ITON films was found to be dependent on the nitrogen concentration in the plasma. Increasing the amount of nitrogen in the plasma increased the resistivity and reduced the carrier concentration and mobility of the films. The electrical properties of the ITON films improved after annealing. The absorption edge of the ITON films deposited in pure N-2 plasma was shifted towards higher energies and showed reduced infrared reflectance compared to the respective properties of ITO films. The potential of indium-tin-oxynitride films for use as a transparent conductive material for optoelectronic devices is addressed.en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationAperathitis, E., Bender, M., Cimalla, V., Ecke, G. and Modreanu, M. (2003) 'Properties of rf-sputtered indium–tin-oxynitride thin films', Journal of Applied Physics, 94(2), pp. 1258-1266. doi: 10.1063/1.1582368en
dc.identifier.doi10.1063/1.1582368
dc.identifier.endpage1266
dc.identifier.issn0021-8979
dc.identifier.issued2
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1258
dc.identifier.urihttps://hdl.handle.net/10468/4236
dc.identifier.volume94
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.1582368
dc.rights© 2003 American Institute of Physics, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Aperathitis, E., Bender, M., Cimalla, V., Ecke, G. and Modreanu, M. (2003) 'Properties of rf-sputtered indium–tin-oxynitride thin films', Journal of Applied Physics, 94(2), pp. 1258-1266 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1582368en
dc.subjectOxide-filmsen
dc.subjectOptical-propertiesen
dc.subjectConductivityen
dc.subjectPowderen
dc.subjectThin filmsen
dc.subjectThin film structureen
dc.subjectPlasma materials processingen
dc.subjectPlasma propertiesen
dc.subjectOptical propertiesen
dc.titleProperties of rf-sputtered indium-tin-oxynitride thin filmsen
dc.typeArticle (peer-reviewed)en
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