Inducing imperfections in germanium nanowires

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dc.contributor.authorBiswas, Subhajit
dc.contributor.authorBarth, Sven
dc.contributor.authorHolmes, Justin D.
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2018-01-17T12:20:04Z
dc.date.available2018-01-17T12:20:04Z
dc.date.issued2017-03-02
dc.date.updated2018-01-16T17:27:22Z
dc.description.abstractNanowires with inhomogeneous heterostructures such as polytypes and periodic twin boundaries are interesting due to their potential use as components for optical, electrical, and thermophysical applications. Additionally, the incorporation of metal impurities in semiconductor nanowires could substantially alter their electronic and optical properties. In this highlight article, we review our recent progress and understanding in the deliberate induction of imperfections, in terms of both twin boundaries and additional impurities in germanium nanowires for new/enhanced functionalities. The role of catalysts and catalyst–nanowire interfaces for the growth of engineered nanowires via a three-phase paradigm is explored. Three-phase bottom-up growth is a feasible way to incorporate and engineer imperfections such as crystal defects and impurities in semiconductor nanowires via catalyst and/or interfacial manipulation. “Epitaxial defect transfer” process and catalyst–nanowire interfacial engineering are employed to induce twin defects parallel and perpendicular to the nanowire growth axis. By inducing and manipulating twin boundaries in the metal catalysts, twin formation and density are controlled in Ge nanowires. The formation of Ge polytypes is also observed in nanowires for the growth of highly dense lateral twin boundaries. Additionally, metal impurity in the form of Sn is injected and engineered via third-party metal catalysts resulting in above-equilibrium incorporation of Sn adatoms in Ge nanowires. Sn impurities are precipitated into Ge bi-layers during Ge nanowire growth, where the impurity Sn atoms become trapped with the deposition of successive layers, thus giving an extraordinary Sn content (>6 at.%) in Ge nanowires. A larger amount of Sn impingement (>9 at.%) is further encouraged by utilizing the eutectic solubility of Sn in Ge along with impurity trapping.en
dc.description.statusPeer revieweden
dc.description.versionSubmitted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBiswas, S., Barth, S. and Holmes, J. D. (2017) 'Inducing imperfections in germanium nanowires', Nano Research, 10(5), pp. 1510-1523. doi:10.1007/s12274-017-1430-9en
dc.identifier.doi10.1007/s12274-017-1430-9
dc.identifier.endpage1523en
dc.identifier.issn1998-0124
dc.identifier.issn1998-0000
dc.identifier.issued5en
dc.identifier.journaltitleNano Researchen
dc.identifier.startpage1510en
dc.identifier.urihttps://hdl.handle.net/10468/5288
dc.identifier.volume10en
dc.language.isoenen
dc.publisherTsinghua University Press and Springer-Verlagen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2513/IE/Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices/en
dc.relation.projectScience Foundation Ireland (SFI International Strategic Co-operation Award (ISCA) India Ireland program)en
dc.relation.urihttp://link.springer.com/article/10.1007/s12274-017-1430-9
dc.rights© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2017. This is a pre-print of an article published in Nano Research. The final authenticated version is available online at: https://doi.org/10.1007/s12274-017-1430-9en
dc.subjectGermaniumen
dc.subjectNanowireen
dc.subjectVapor-liquid-solid (VLS)en
dc.subjectGrowthen
dc.subjectTwinningen
dc.subjectImpurity incorporationen
dc.subjectIII-V nanowiresen
dc.subjectSilicon nanowiresen
dc.subjectDefect formationen
dc.subjectGE nanowiresen
dc.subjectTwinning superlatticesen
dc.subjectNanoelectromechanical devicesen
dc.subjectStacking-faultsen
dc.subjectGrowthen
dc.subjectSemiconductorsen
dc.subjectPerformanceen
dc.titleInducing imperfections in germanium nanowiresen
dc.typeArticle (peer-reviewed)en
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