Giant piezoresistance in silicon-germanium alloys

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dc.contributor.authorMurphy-Armando, Felipe
dc.contributor.authorFahy, Stephen B.
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2016-06-01T14:35:57Z
dc.date.available2016-06-01T14:35:57Z
dc.date.issued2012-01
dc.date.updated2013-02-20T12:07:26Z
dc.description.abstractWe use first-principles electronic structure methods to show that the piezoresistive strain gauge factor of single-crystalline bulk n-type silicon-germanium alloys at carefully controlled composition can reach values of G = 500, three times larger than that of silicon, the most sensitive such material used in industry today. At cryogenic temperatures of 4 K we find gauge factors of G = 135 000, 13 times larger than that observed in Si whiskers. The improved piezoresistance is achieved by tuning the scattering of carriers between different (Delta and L) conduction band valleys by controlling the alloy composition and strain configuration.en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid035205
dc.identifier.citationMURPHY-ARMANDO, F. & FAHY, S. 2012. Giant piezoresistance in silicon-germanium alloys. Physical Review B, 86, 035205.en
dc.identifier.doi10.1103/PhysRevB.86.035205
dc.identifier.endpage035205-4en
dc.identifier.issn2469-9969
dc.identifier.issn2469-9950
dc.identifier.journaltitlePhysical Review Ben
dc.identifier.startpage035205-1en
dc.identifier.urihttps://hdl.handle.net/10468/2666
dc.identifier.volume86en
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.relation.urihttp://link.aps.org/doi/10.1103/PhysRevB.86.035205
dc.rights©2012 American Physical Societyen
dc.subjectSemiconductorsen
dc.subjectTemperaturesen
dc.titleGiant piezoresistance in silicon-germanium alloysen
dc.typeArticle (peer-reviewed)en
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