The characterization and passivation of fixed oxide charges and interface states in the Al2O3/InGaAs MOS system

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dc.contributor.authorHurley, Paul K.
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorDjara, Vladimir
dc.contributor.authorMonaghan, Scott
dc.contributor.authorPovey, Ian M.
dc.contributor.authorLong, Rathnait D.
dc.contributor.authorSheehan, Brendan
dc.contributor.authorLin, Jun
dc.contributor.authorMcIntyre, Paul C.
dc.contributor.authorBrennan, Barry
dc.contributor.authorWallace, Robert M.
dc.contributor.authorPemble, Martyn E.
dc.contributor.authorCherkaoui, Karim
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderFulbright Associationen
dc.contributor.funderNational Science Foundationen
dc.date.accessioned2022-08-22T15:00:17Z
dc.date.available2022-08-22T15:00:17Z
dc.date.issued2013-09-18
dc.date.updated2022-08-22T14:14:02Z
dc.description.abstractIn this paper, we present a review of experimental results examining charged defect components in the Al 2 O 3 /In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) system. For the analysis of fixed oxide charge and interface state density, an approach is described where the flatband voltage for n- and p-type Al 2 O 3 /In 0.53 Ga 0.47 As MOS structures is used to separate and quantify the contributions of fixed oxide charge and interface state density. Based on an Al 2 O 3 thickness series (10-20 nm) for the n- and p-type In 0.53 Ga 0.47 As layers, the analysis reveals a positive fixed charge density ( ~ 9 ×10 18 cm -3 ) distributed throughout the Al 2 O 3 and a negative sheet charge density (- 8 × 10 12 cm -2 ) located near the Al 2 O 3 /In 0.53 Ga 0.47 As interface. The interface state density integrated across the energy gap is ~1 ×10 13 cm -2 and is a donor-type (+/0) defect. The density of the fixed oxide charge components is significantly reduced by forming gas (5 % H 2 / 95% N 2 ambient at 350 °C for 30 minutes) annealing. The interface state distribution obtained from multi-frequency capacitance-voltage and conductance-voltage measurements on either MOS structures or MOSFETs indicates a peak density located around the In 0.53 Ga 0.47 As midgap energy, with a sharp increase in the interface state density toward the valance band and evidence of interface states aligned with the In 0.53 Ga 0.47 As conduction band. The integrated interface state density obtained from multi-frequency capacitance-voltage and conductance-voltage analysis is in good agreement with the approach of comparing the flatband voltages in n- and p -type Al 2 O 3 /In 0.53 Ga 0.47 As MOS structures. Finally, this paper reviews recent work based on an optimization of the In 0.53 Ga 0.47 As surface preparation using (NH 4 ) 2 S, combined with minimizing the transfer time to the atomic layer deposition reactor for Al 2 O 3 , which indicates interface state reduction and genuine surface inversion for both n- and p -type Al 2 O 3 /In 0.53 Ga 0.47 As MOS structures.en
dc.description.sponsorshipScience Foundation Ireland (09/IN.1/I2633; 07/SRC/I1172); National Science Foundation (US-Ireland research collaboration under ECCS Award 0925844)en
dc.description.statusPeer revieweden
dc.description.versionSubmitted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHurley, P. K., O'Connor, É., Djara, V., Monaghan, S., Povey, I. M., Long, R. D., Sheehan, B., Lin, J., McIntyre, P. C., Brennan, B., Wallace, R. M., Pemble, M. E. and Cherkaoui, K. (2013) ‘The characterization and passivation of fixed oxide charges and interface states in the Al2O3/InGaAs MOS system’, IEEE Transactions on Device and Materials Reliability, 13(4), pp. 429-443. doi: 10.1109/TDMR.2013.2282216en
dc.identifier.doi10.1109/TDMR.2013.2282216en
dc.identifier.eissn1558-2574
dc.identifier.endpage443en
dc.identifier.issn1530-4388
dc.identifier.issued4en
dc.identifier.journaltitleIEEE Transactions on Device and Materials Reliabilityen
dc.identifier.startpage429en
dc.identifier.urihttps://hdl.handle.net/10468/13492
dc.identifier.volume13en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI US Ireland R&D Partnership/08/US/I1546/IE/Future Oxides and Channel Materials for Ultimate Scaling (FOCUS)/en
dc.rights© 2013, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectHigh-ken
dc.subjectInGaAsen
dc.subjectFixed oxide chargesen
dc.subjectInterface state densityen
dc.subjectC–V analysisen
dc.subjectCharacterizationen
dc.subjectPassivationen
dc.titleThe characterization and passivation of fixed oxide charges and interface states in the Al2O3/InGaAs MOS systemen
dc.typeArticle (peer-reviewed)en
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