An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination

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dc.contributor.authorZhao, Chao
dc.contributor.authorNg, Tien Khee
dc.contributor.authorPrabaswara, Aditya
dc.contributor.authorConroy, Michele
dc.contributor.authorJahangir, Shafat
dc.contributor.authorFrost, Thomas
dc.contributor.authorO'Connell, John
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorParbrook, Peter J.
dc.contributor.authorBhattacharya, P.
dc.contributor.authorOoi, Boon S.
dc.contributor.funderKing Abdullah University of Science and Technologyen
dc.date.accessioned2016-03-07T13:05:43Z
dc.date.available2016-03-07T13:05:43Z
dc.date.issued2015-07-24
dc.date.updated2015-12-11T10:41:29Z
dc.description.abstractWe present a detailed study of the effects of dangling bond passivation and the comparison of different sulfide passivation processes on the properties of InGaN/GaN quantum-disk (Qdisk)-in-nanowire based light emitting diodes (NW-LEDs). Our results demonstrated the first organic sulfide passivation process for nitride nanowires (NWs). The results from Raman spectroscopy, photoluminescence (PL) measurements, and X-ray photoelectron spectroscopy (XPS) showed that octadecylthiol (ODT) effectively passivated the surface states, and altered the surface dynamic charge, and thereby recovered the band-edge emission. The effectiveness of the process with passivation duration was also studied. Moreover, we also compared the electro-optical performance of NW-LEDs emitting at green wavelength before and after ODT passivation. We have shown that the Shockley–Read–Hall (SRH) non-radiative recombination of NW-LEDs can be greatly reduced after passivation by ODT, which led to a much faster increasing trend of quantum efficiency and higher peak efficiency. Our results highlighted the possibility of employing this technique to further design and produce high performance NW-LEDs and NW-lasers.en
dc.description.sponsorshipKing Abdullah University of Science and Technology, Saudi Arabia (KAUST Competitive Research Grant)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationZHAO, C., NG, T. K., PRABASWARA, A., CONROY, M., JAHANGIR, S., FROST, T., O'CONNELL, J., HOLMES, J. D., PARBROOK, P. J., BHATTACHARYA, P. & OOI, B. S. 2015. An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination. Nanoscale, 7, 16658-16665. http://dx.doi.org/10.1039/C5NR03448Een
dc.identifier.doi10.1039/c5nr03448e
dc.identifier.endpage16665en
dc.identifier.issn2040-3364
dc.identifier.issued40en
dc.identifier.journaltitleNanoscaleen
dc.identifier.startpage16658en
dc.identifier.urihttps://hdl.handle.net/10468/2418
dc.identifier.volume7en
dc.language.isoenen
dc.publisherThe Royal Society of Chemistryen
dc.relation.urihttp://pubs.rsc.org/en/journals/journalissues/nr#!recentarticles&adv
dc.rights© The Royal Society of Chemistry 2015. This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.en
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.subjectEfficiencyen
dc.subjectNanowiresen
dc.subjectPassivationen
dc.subjectQuantum efficiencyen
dc.subjectX ray photoelectron spectroscopyen
dc.subjectBand-edge emissionsen
dc.subjectElectro optical performanceen
dc.subjectNanowire light emitting diodesen
dc.subjectNon-radiative recombinationsen
dc.subjectPhotoluminescence measurementsen
dc.subjectShockley-Read-Hall recombinationsen
dc.subjectSulfide passivationsen
dc.subjectLight emitting diodesen
dc.titleAn enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombinationen
dc.typeArticle (peer-reviewed)en
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